Students explore the PN Junction Simulation Tool in order to understand depletion, carrier modeling, and PN junction device physics. Analyze (i) carrier concentration and electric field as a function of doping, and (ii) energy barriers, depletion widths, and net charge density as a function of applied bias.

Dr. Stella Quinones is an Associate Professor of Electrical and Computer Engineering at The University of Texas at El Paso (UTEP) where she has been a faculty member for the past 17 years.  Her research areas include the effect of Zn doping on selective nanoscale CdTe deposition on CdTe(111), Si(100), Si(111) and Si(211) using a conventional close-spaced sublimation (CSS) technique for applications related to solar cells, x-ray imaging and infrared detectors, along with contributions to engineering education.

Researchers should cite this work as follows:

• Dragica Vasileska; Matteo Mannino; Michael McLennan; Xufeng Wang; Gerhard Klimeck; Saumitra Raj Mehrotra; Benjamin P Haley (2014), PN Junction Lab, https://nanohub.org/resources/pntoy. (DOI: 10.4231/D3GH9B95N).

• Stella Quinones (2015), "Quantum Workshop IV: Modeling PN Junctions," https://nanohub.org/resources/22056.

  BibTex | EndNote

1. charge density
2. Depletion Width
3. doping
4. Electric Field
5. PN Junction Lab