High-Rate Processing and Advanced Emitter Structures for CIGS PV Module Manufacturing

By B. J. Stanbery

HelioVolt Corporation, Austin, TX

Published on

Abstract

Achieving both macroscopic homogeneity and nanoscale heterogeneity for non-stoichiometric multinary compounds is a critical challenge for the success of copper indium gallium selenide (CIGS) photovoltaic cells. Co-evaporation yields world record performance, but is also a high-temperature vacuum process that is difficult to scale. Here, we consider reactive transfer processing (RTP), which has been developed by Heliovolt as an alternative. In this process, distinct compound precursor layers are independently deposited on a substrate at low temperature, and then reacted into a high- performance polycrystalline CIGS morphology with unique control of the morphology ranging from the conventional planar to nanostructures which both trap light and enable 3-dimensional carrier collection. Areas of current research interest include conformal graded-composition emitter structures, increasing open-circuit voltage, process yield, and long-term reliability.

Bio

B.J. Stanbery Dr. B.J. Stanbery is chief science officer for HelioVolt Corporation. His career spans more than 30 years in the solar industry. He is an expert in the business and science of photovoltaics (PV). In 2008, his innovation of inkjet printing of CIGS, won a prestigious 2008 R&D 100 Award. He founded HelioVolt to develop and commercialize a revolutionary FASST® process for manufacturing CIGS thin-film PV that is now covered by 11 patents issued, 9 additional patent applications, and 83 international extensions. Prior to founding HelioVolt, Dr. Stanbery managed Boeing's terrestrial PV program. During that 17-year tenure his team manufactured and deployed PV for spacecraft, and in 1990 achieved the world record in multi-junction thin-film PV conversion efficiency. Dr. Stanbery completed his Ph.D. in Chemical Engineering in 2001 at the University of Florida, having previously obtained an M.S. in Physics from the University of Washington and B.S. in both Physics and Mathematics from the University of Texas. Dr. Stanbery also serves on the Board of the Texas Renewable Energy Association (TREIA), and as Chairman of the Board of the Texas Foundation for Innovative Communities (TFIC).

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Researchers should cite this work as follows:

  • B. J. Stanbery (2013), "High-Rate Processing and Advanced Emitter Structures for CIGS PV Module Manufacturing," https://nanohub.org/resources/18905.

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Birck Nanotechnology Building, Room 1001, Purdue University, West Lafayette, IN

High-Rate Processing and Advanced Emitter Structures for CIGS PV Module Manufacturing
  • High-Rate Processing and Advanced Emitter Structures for CIGS PV Module Manufacturing 1. High-Rate Processing and Advan… 0
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  • Co-Authors & Acknowledgments 2. Co-Authors & Acknowledgments 147.08041374708043
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  • Outline 3. Outline 200.10010010010012
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  • Point Defect Thermochemistry and PV Device Physics of CIGS 4. Point Defect Thermochemistry a… 275.37537537537537
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  • Goals of this presentation 5. Goals of this presentation 284.45111778445113
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  • Significant Equilibrium Species in CMM Model 6. Significant Equilibrium Specie… 364.99833166499832
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  • Important Independent Defect Reactions in a-CIS 7. Important Independent Defect R… 757.05705705705714
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  • Cu–(In,Ga)–Se Ternary Alloys Molecularity (M) and Stoichiometry (S) 8. Cu–(In,Ga)–Se Ternary Allo… 880.64731398064737
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  • Dominant Defects in In-Rich a-CIS with V≤1 9. Dominant Defects in In-Rich a-… 1291.4914914914916
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  • Unrecognized CIS Absorber Non-Stoichiometry : Valency 10. Unrecognized CIS Absorber Non-… 1385.885885885886
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  • Dominant Defects of In-Rich a-CIS with V>1 11. Dominant Defects of In-Rich a-… 1430.1301301301303
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  • Segregation Reactions and Formation of b-CIS phase 12. Segregation Reactions and Form… 1483.1831831831833
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  • Structural vs. Chemical Disorder in Thin Film Photovoltaic (TFPV) Materials 13. Structural vs. Chemical Disord… 1614.1141141141143
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  • Adamantine Crystallographic Structures 14. Adamantine Crystallographic St… 1724.9916583249917
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  • CIGS Complex Non-Stoichiometric Thermochemical Phase Structure 15. CIGS Complex Non-Stoichiometri… 1837.8712045378713
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  • Cu–(In,Ga)–Se Ternary Alloys Molecularity (M) and Stoichiometry (S) 16. Cu–(In,Ga)–Se Ternary Allo… 1852.6192859526193
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  • CIGS Complex Non-Stoichiometric Thermochemical Phase Structure 17. CIGS Complex Non-Stoichiometri… 1864.9983316649984
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  • Polycrystallinity and Recombination 18. Polycrystallinity and Recombin… 2011.2445779112447
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  • CIGS Non-Stoichiometry and Atypical Device Behavior 19. CIGS Non-Stoichiometry and Aty… 2128.2949616282949
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  • Intra-Absorber Junction (IAJ) Model 20. Intra-Absorber Junction (IAJ) … 2171.3713713713714
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  • Composition Fluctuations and Carrier Transport in CIGS PV Absorbers 21. Composition Fluctuations and C… 2286.6866866866867
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  • CIGS: Spontaneous 'Bulk Heterojunction' Formation 22. CIGS: Spontaneous 'Bulk Hetero… 2361.2612612612616
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  • Role of Nano-Engineering in Next-Generation CIGS PV Device Technology 23. Role of Nano-Engineering in Ne… 2391.6249582916253
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  • Motivation for alternative CIGS processing approach 24. Motivation for alternative CIG… 2424.391057724391
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  • Characteristics of an Ideal CIGS Manufacturing Method 25. Characteristics of an Ideal CI… 2441.9753086419755
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  • Rate Limitations in CIGS Synthesis 26. Rate Limitations in CIGS Synth… 2491.157824491158
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  • Synopsis of Prior Art for CIGS Synthesis: Co-evaporation 27. Synopsis of Prior Art for CIGS… 2506.2062062062064
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  • Synopsis of Prior Art for CIGS Synthesis: Metal Precursor Selenization 28. Synopsis of Prior Art for CIGS… 2604.2375709042376
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  • Synopsis of Prior Art for CIGS Synthesis: Oxide Precursor Selenization 29. Synopsis of Prior Art for CIGS… 2681.6816816816818
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  • Synopsis of Prior Art for CIGS Synthesis: Stacked Elemental Layers (SEL) 30. Synopsis of Prior Art for CIGS… 2777.9779779779783
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  • Reactive Transfer Processing 31. Reactive Transfer Processing 2841.0076743410077
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  • Reactive Transfer Processing of Compound Precursors 32. Reactive Transfer Processing o… 2842.676009342676
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  • Reactive Transfer Processing Stage 1 Precursor Deposition 33. Reactive Transfer Processing S… 2898.9656322989658
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  • Metal-Organic Decomposition (MOD) Precursor Film Deposition 34. Metal-Organic Decomposition (M… 2953.9205872539205
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  • MOD Comparison with Vacuum Precursor Deposition Method 35. MOD Comparison with Vacuum Pre… 2967.867867867868
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  • Hybrid Vacuum/MOD Precursor CIGS by Contact FASST® 36. Hybrid Vacuum/MOD Precursor CI… 2986.5532198865535
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  • Reactive Transfer Processing: Stage 2 Reaction Technologies 37. Reactive Transfer Processing: … 3021.7884551217885
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  • Reactive Transfer Processing Non-Contact Transfer Synthesis (NCT™) 38. Reactive Transfer Processing N… 3063.4968301634967
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  • Self-Assembled Nanostructure Formation for Advanced Light Trapping 39. Self-Assembled Nanostructure F… 3086.61995328662
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  • Ultrafast Heating, Two Approaches: Both Show Improved Crystallization 40. Ultrafast Heating, Two Approac… 3152.018685352019
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  • Advanced Emitter Structures 41. Advanced Emitter Structures 3181.1144477811144
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  • Advanced Light Trapping Buffer 42. Advanced Light Trapping Buffer 3190.5238571905238
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  • Introduction to Amorphous Zinc-Tin-Oxide (a-ZTO) 43. Introduction to Amorphous Zinc… 3247.9813146479814
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  • a-ZTO band comparison 44. a-ZTO band comparison 3298.798798798799
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  • Efficiency vs. intrinsic layer 45. Efficiency vs. intrinsic layer 3360.5271938605274
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  • Advanced Light Trapping Current 46. Advanced Light Trapping Curren… 3400.1334668001336
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  • Comparison of Nanostructured and Planar Absorbers 47. Comparison of Nanostructured a… 3551.7517517517517
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  • Advanced Light Trapping TRO 48. Advanced Light Trapping TRO 3660.4270937604274
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  • Improved Device Performance Using ALD Deposition and Zinc Tin Oxide TRO 49. Improved Device Performance Us… 3726.6599933266602
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  • Conclusions 50. Conclusions 3851.5515515515517
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  • Thank You! 51. Thank You! 3994.1941941941946
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