1. What is the name of the failure distribution that we expect for thin oxides?
2. For thin oxides, is PMOS or NMOS more of a concern in modern transistors?
3. What is DBIE? When does it occur? Can the transistor be still functional ?
4. In what ways is TDDB compare with NBTI and HCI time-degradation? Explain.
5. Why do you suspect that hard breakdown destroys thick oxide, while in thin oxides breakdown can be soft?
6. What is stress-induced leakage current? What is ‘stress-induced’ about it?

Researchers should cite this work as follows:

• Muhammad Alam (2013), "ECE 695A Lecture 21R: Review Questions," https://nanohub.org/resources/17249.

  BibTex | EndNote

1. course lecture
2. dielectric breakdown
3. nanoelectronics
4. NBTI
5. reliability
6. TDDB