ECE 656 Lecture 36: High-field Transport

By Mark Lundstrom

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

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Abstract

Outline:
  1. Brief Introduction
  2. Current Equation
  3. Qualitative features of high field transport
  4. Saturated velocity
  5. Electron temperature model
  6. Survey of results
  7. Quick Summary

Cite this work

Researchers should cite this work as follows:

  • Mark Lundstrom (2012), "ECE 656 Lecture 36: High-field Transport," https://nanohub.org/resources/12711.

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Location

EE 115, Purdue University, West Lafayette, IN

Tags

  1. Charge Transport
  2. course lecture
  3. energy balance equation
  4. hot carrier transport
  5. nanoelectronics
  6. nanotransistors
ECE 656 Lecture 36: High-field Transport
  • ECE 656 Lecture 36: High-field Transport 1. ECE 656 Lecture 36: High-field… 0
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  • velocity vs. field characteristics 2. velocity vs. field characteris… 29
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  • outline 3. outline 126.66666666666667
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  • current equation 4. current equation 137.83333333333334
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  • current equation: bulk semiconductor 5. current equation: bulk semicon… 253.7
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  • field-dependent mobility 6. field-dependent mobility 351.6
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  • outline 7. outline 438.06666666666666
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  • covalent vs. polar semiconductors 8. covalent vs. polar semiconduct… 443.63333333333333
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  • average energy vs. electric field 9. average energy vs. electric fi… 582.76666666666665
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  • average velocity vs. electric field 10. average velocity vs. electric … 676.93333333333328
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  • mobility and diffusion coefficient 11. mobility and diffusion coeffic… 754.7
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  • outline 12. outline 1025.2333333333334
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  • can we calculate υSAT? 13. can we calculate υSAT? 1126.6
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  • can we calculate υSAT? 14. can we calculate υSAT? 1305.9666666666667
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  • saturation velocoty 15. saturation velocoty 1389.3
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  • outline 16. outline 1460.5333333333333
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  • electron temperature approach 17. electron temperature approach 1473.4
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  • electron temperature approach 18. electron temperature approach 1577.6666666666667
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  • electron temperature approach 19. electron temperature approach 1638.1666666666667
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  • aside: neglect of the drift energy 20. aside: neglect of the drift en… 1794.2333333333334
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  • electron temperature model 21. electron temperature model 1985.9666666666667
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  • the procedure 22. the procedure 2169.6666666666665
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  • result (for silicon) 23. result (for silicon) 2242.1666666666665
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  • velocity vs. field characteristic 24. velocity vs. field characteris… 2316.5
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  • high- field diffusion 25. high- field diffusion 2403.5
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  • outline 26. outline 2461.1
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  • <111> Silicon: low-field 27. <111> Silicon: low-field 2485.7666666666669
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  • <111> Silicon: high-field 28. <111> Silicon: high-field 2605.9333333333334
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  • <111> Silicon: high-field 29. <111> Silicon: high-field 2712.5666666666666
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  • suggested exercises 30. suggested exercises 2783.2666666666669
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  • <100> Silicon: high-field 31. <100> Silicon: high-field 2795.2
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  • <100> Silicon: high-field 32. <100> Silicon: high-field 2822.8
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  • <100> Silicon: high-field 33. <100> Silicon: high-field 2872.4
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  • outline 34. outline 2885.4666666666667
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  • summary 35. summary 2889.4
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  • questions 36. questions 2926
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