ECE 656 Lecture 8: More about Resistance

By Mark Lundstrom

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

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Licensed under Creative Commons BY-NC-SA 3.0.

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Abstract

Outline:
  1. Review
  2. Discussion
    • power dissipation
    • voltage drop
    • n-type vs. p-type
    • “apparent” mobility
  3. 1D and 3D resistors
  4. Graphene: A case study
  5. Summary

Cite this work

Researchers should cite this work as follows:

  • Mark Lundstrom (2011), "ECE 656 Lecture 8: More about Resistance," https://nanohub.org/resources/12125.

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Location

ECE 115, Purdue University, West Lafayette, IN

Tags

  1. Charge Transport
  2. course lecture
  3. diffusive transport
  4. nanoelectronics
  5. nanotransistors
ECE 656 Lecture 8: More about Resistance
  • ECE-656: Fall 2011 Lecture 8: More about Resistance Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA 1. ECE-656: Fall 2011 Lecture 8:… 0
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  • resistors 2. resistors 54.166666666666664
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  • definitions of <M> and <<λ>> 3. definitions of and <<λ>> 105.93333333333334
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  • outline 4. outline 150.96666666666667
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  • power dissipation in a ballistic resistor 5. power dissipation in a ballist… 203.13333333333333
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  • power dissipation in a ballistic resistor 6. power dissipation in a ballist… 229.86666666666667
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  • voltage drop in a ballistic resistor 7. voltage drop in a ballistic re… 413.23333333333335
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  • another view 8. another view 555.43333333333328
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  • another view 9. another view 658.2
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  • n-type conduction vs. p-type 10. n-type conduction vs. p-type 1087.3333333333333
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  • n-type 11. n-type 1133.3333333333333
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  • p-type 12. p-type 1207.2333333333334
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  • bipolar conduction 13. bipolar conduction 1332.5333333333333
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  • discussion 14. discussion 1397.8
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  • mobility 15. mobility 1438.1333333333334
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  • how should we define mobility? 16. how should we define mobility? 1535.3333333333333
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  • in the diffusive limit 17. in the diffusive limit 1690.8
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  • in the ballistic limit 18. in the ballistic limit 1747.1333333333334
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  • ballistic to diffusive… 19. ballistic to diffusive… 1788.5
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  • TL = 0K apparent mobility 20. TL = 0K apparent mobility 1862.5
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  • “ballistic mobility” in 2D at TL = 0K 21. “ballistic mobility” in 2D… 1954.2
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  • ballistic conductance (TL = 0 K) 22. ballistic conductance (TL = 0 … 2123.3666666666668
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  • exercise: nanoscale FETs 23. exercise: nanoscale FETs 2172.9666666666667
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  • outline 24. outline 2288.9
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  • 1D and 3D resistors 25. 1D and 3D resistors 2300.6
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  • 1D 26. 1D 2319.4666666666667
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  • 3D 27. 3D 2356.4
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  • 1D, 2D, and 3D resistors 28. 1D, 2D, and 3D resistors 2391.7
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  • 1D, 2D, and 3D resistors 29. 1D, 2D, and 3D resistors 2430.1666666666665
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  • 1D resistors 30. 1D resistors 2480.8333333333335
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  • 2D resistors 31. 2D resistors 2517.3666666666668
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  • 3D resistors 32. 3D resistors 2545.8
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  • 1D: example: low-field transport in metallic CNTs 33. 1D: example: low-field trans… 2568.4333333333334
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  • outline 34. outline 2695.5666666666666
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  • graphene 35. graphene 2698.2333333333331
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  • outline 36. outline 2818.0666666666666
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  • key points 37. key points 2820.1
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  • key points 38. key points 2849.0333333333333
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  • questions 39. questions 2861.3666666666668
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