A Physical Model for Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon Solar Cells

By Sourabh Dongaonkar1; Souvik Mahapatra2; Karthik Yogendra3; Muhammad Alam1

1. Electrical and Computer Engineering, Purdue University, West Lafayette, IN 2. Department of Electrical Engineering, IIT Bombay, Mumbai, India 3. Purdue University

Published on

Abstract

In this talk we develop a coherent physics based understanding of the shunt leakage problem in a-Si:H cells, and discuss its implications on cell and module level.

Bio

Sourabh Dongaonkar is with School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN
Karthik Y and Souvik Mahapatra are with Department of Electrical Engineering, IIT Bombay, Mumbai, India

Sponsored by

SRC ERI, Network for Photovoltaic Technology

References

[1] V. Sittinger, F. Ruske, W. Werner, B. Szyszka, B. Rech, J. Hüpkes, G. Schöpe, and H. Stiebig, "ZnO:Al films deposited by in-line reactive AC magnetron sputtering for a-Si:H thin film solar cells," Thin Solid Films, vol. 496, pp. 16-25, 2006.
[2] S. Dongaonkar, K. Y, D. Wang, M. Frei, S. Mahapatra, and M. A. Alam, "On the Nature of Shunt Leakage in Amorphous Silicon p-i-n Solar Cells," Electron Device Letters, IEEE, vol. 31, pp. 1266-1268, 2010.
[3] A. Rose, "Space-charge-limited currents in solids," Physical Review, vol. 97, pp. 1538-1544, 1955.
[4] M. S. Haque, H. A. Naseem, and W. D. Brown, "Aluminum-induced degradation and failure mechanisms of a-Si:H solar cells," Solar Energy Materials and Solar Cells, vol. 41-42, pp. 543-555, 1996.
[5] R. A. Street, Hydrogenated amorphous silicon. Cambridge; New York: Cambridge University Press, 1991.
[6] A. Avila and R. Asomoza, "Switching in coplanar amorphous hydrogenated silicon devices," Solid-State Electronics, vol. 44, pp. 17-27, 2000.

Publications

Dongaonkar S., Karthik Y, Mahapatra S., Alam M. A., "A Physical Model for Non-Ohmic Conduction and Metastability in Amorphous Silicon Solar Cells.", 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, 2011

Cite this work

Researchers should cite this work as follows:

  • Sourabh Dongaonkar, Souvik Mahapatra, Karthik Yogendra, Muhammad Alam (2011), "A Physical Model for Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon Solar Cells," https://nanohub.org/resources/11841.

    BibTex | EndNote

Location

37th IEEE Photovoltaic Specialists Conference, Seattle WA

Tags

A Physical Model for Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon Solar Cells
  • S Dongaonkar1, Karthik Y2, S Mahapatra2, and M A Alam1 1. S Dongaonkar1, Karthik Y2, S M… 0
    00:00/00:00
  • Introduction 2. Introduction 27.3799991607666
    00:00/00:00
  • A closer look at dark IV 3. A closer look at dark IV 125.65100288391113
    00:00/00:00
  • Space-Charge-Limited Shunt 4. Space-Charge-Limited Shunt 331.46100044250488
    00:00/00:00
  • Physical model for SCL shunt 5. Physical model for SCL shunt 450.201997756958
    00:00/00:00
  • Predictions – Thickness Dependence 6. Predictions – Thickness Depe… 671.49199104309082
    00:00/00:00
  • Predictions – Hole transport 7. Predictions – Hole transport 783.352991104126
    00:00/00:00
  • Nonvolatile metastable switching 8. Nonvolatile metastable switchi… 918.50399208068848
    00:00/00:00
  • Features of Switching Behavior 9. Features of Switching Behavior 1049.3539981842041
    00:00/00:00
  • Switching Mechanism 10. Switching Mechanism 1136.2739963531494
    00:00/00:00
  • Conclusions 11. Conclusions 1422.2739963531494
    00:00/00:00
  • Acknowledgement 12. Acknowledgement 1550.5639896392822
    00:00/00:00
  • References 13. References 1571.4539890289307
    00:00/00:00