Purdue Microelectronics and Nanotechnology Overview
Online Presentations | 09 Sep 2021 | Contributor(s): Samantha Nelson, Muhammad A. Alam, Joerg Appenzeller, Zhihong Chen, Supriyo Datta, David Janes, Gerhard Klimeck, Dana Weinstein, Pramey Upadhyaya, Peide "Peter" Ye
In today’s modern world, microelectronics has touched every aspect of our lives. None of us can imagine or live in a world without personal computers, smart phones, and probably very soon autonomous cars. To continue its expansion and go beyond the traditional semiconductor technologies,...
Fundamental Properties of a New van der Waals Material: Tellurium
Online Presentations | 01 Apr 2021 | Contributor(s): Peide "Peter" Ye
We report the first experimental observation of Weyl fermions in a semiconductor -- high-quality n-type tellurene (the two-dimensional form of tellurium) achieved by atomic layer deposited dielectric doping.
Moore’s Law Extension and Beyond
Online Presentations | 19 Nov 2018 | Contributor(s): Peide "Peter" Ye
In his talk, Ye will review his research efforts at Purdue on materials, structures and device architecture to support the microelectronic industry and extend Moore’s Law. The goal of the research is that it will lead to smarter, ubiquitous computing technology and keep us healthier,...
Steep-slope Hysteresis-free Negative Capacitance Field-effect Transistors Enabled by Atomic Layer Deposited Ferroelectric HfZrO2
Online Presentations | 20 Feb 2018 | Contributor(s): Peide "Peter" Ye
The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering of the supply voltage and the overall power consumption....
Atomic Layer Epitaxy Dielectrics for III-N MOS Technology
Online Presentations | 10 Oct 2017 | Contributor(s): Peide "Peter" Ye
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