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ECE 606: Solid State Devices - Professors Muhammad A. Alam and Mark Lundstrom

This course was developed by Professor Mark Lundstrom using Professor Muhammad Alam’s lectures. It focuses on basic semiconductor physics and the physics of three important devices: 1) the PN junction, 2) the bipolar junction transistor (BJT), and 3) the metal-oxide-semiconductor field-effect transistor (MOSFET).

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Purdue University

Current Version

This course was developed by Professor Mark Lundstrom using Professor Muhammad Alam’s lectures. Prof.Alam's lectures are also available on nanoHUB here.

A more current version of this course taught by Gerhard Klimeck is available on edX: Solid State Devices ! and will be available on nanoHUB late September 2020.

Course Description

This course is about basic semiconductor physics and the physics of three important devices: 1) the PN junction, 2) the bipolar junction transistor (BJT), and 3) the metal-oxide-semiconductor field-effect transistor (MOSFET). The course is divided into three parts. The first part is an introduction to quantum mechanics and solid-state physics (energy bands, electrons and holes, the Fermi function), doping and carrier densities, carrier transport and generation-recombination, and the so-called semiconductor equations, which provide a complete, semi-classical, mathematical description of electrons and holes in semiconductors, subject to some important simplifying assumptions. The second part of the course applies these concepts to PN junctions and bipolar junction transistors (BJTs), and the third part treats the dominant electronic device today, the metal-oxide-semiconductor field-effect transistor (MOSFET).

The course covers a lot of ground, but it provides a basic understanding of semiconductors and devices, for those interested in circuits and applications, and a starting point for further studies, for those who intend to focus on electronic materials and devices.

For a useful collection of practice exams, see Prof. Robert Pierret’s: Exams for Semiconductor Device Fundamentals

Week 1: Introduction / Geometry of Crystals
Week 2: Quantum Mechanics / Schrodinger Equation (ASF 22-45)
Week 3: Energy Bands / Energy Bands in 3D Crystals
Week 4: Density of States / Fermi-Dirac Statistics
Week 5: Doping / Equilibrium Statistics / Carrier Conc.
Week 6: Recombination-Generation, Bulk and Surface
Week 7: Carrier Transport / Semiconductor Equations
Week 8: PN and MS Diode Electrostatics / I-V Characteristics
Week 9: PN Junctions – non-ideal / AC Resp. / Trans
Week 10: Bipolar Transistors
Week 11: References and Supplementary Information
Week 12: MOS Electrostatics
Week 13: MOSFETS: Ideal
Week 14: MOSFETS: Nonideal
Week 15: Course Wrap-up
Finals Week

The Final Exam is not comprehensive – Exam 6 is much like Exams 1-5.

Exam 6

Enrolled:	1,670
Course length:	Full Semester
Estimated Effort:	10-16 hrs/week

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About the Instructors

Mark Lundstrom

Purdue University

Mark Lundstrom is the Don and Carol Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University. He was the founding director of the Network for Computational Nanotechnology, which created nanoHUB.org. Lundstrom earned his bachelor’s and master’s degrees from the University of Minnesota in 1973 and 1974, respectively and joined the Purdue faculty upon completing his doctorate on the West Lafayette campus in 1980. Before attending Purdue, he worked at Hewlett-Packard Corporation on MOS process development and manufacturing. His research at Purdue has focused on understanding electronic and thermal transport and how it plays out in semiconductor devices such as solar cells, lasers, thermoelectric devices, and bipolar, MOS, and heterostructure transistors. The development of new modeling and simulation techniques has also been part of this research. Lundstrom is a life fellow the Institute of Electrical and Electronic Engineers (IEEE) and a fellow of the American Physical Society (APS), and the American Association for the Advancement of Science (AAAS). He has received several awards for his contributions to research and education and is a member of the U.S. National Academy of Engineering.

Muhammad A. Alam

Purdue University

MUHAMMAD ASHRAFUL ALAM is a Professor of Electrical and Computer Engineering where his research and teaching focus on physics, simulation, characterization and technology of classical and emerging electronic devices. From 1995 to 2003, he was with Bell Laboratories, Murray Hill, NJ, where he made important contributions to reliability physics of electronic devices, MOCVD crystal growth, and performance limits of semiconductor lasers. At Purdue, Alam’s research has broadened to include flexible electronics, solar cells, and nanobiosensors. He is a fellow of the AAAS, IEEE, and APS and received the 2006 IEEE Kiyo Tomiyasu Award for contributions to device technology.

ECE 606: Solid State Devices - Professors Muhammad A. Alam and Mark Lundstrom

Purdue University

Current Version

Course Description

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