Run failing for default conditions with only gate workfunction different.
Hello,
I am trying to model GAA devices. I tried different device geometries, but the simulation fails with following error: non-zero exit code 1. This happens even when I run the simulation with all the default values with only the Gate WorkFunction changed to 4.5eV.
The devices that I want to model are GAA with different channel lengths: 100 nm to 10 nm. Are there any suggestions for doing this.