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While all of the above suggestions about a choice of simulator
are probably correct - I use proprietary simulators developed by
our own CAD group within my company - there are two, equally
important considerations.
.
FIRST: You need to be very sure of the equations that are used
to model your devices: you cannot achieve accuracy in
your circuit simulations without very accurate models,
.
SECOND: These models, and the resulting simulations, cannot
be accurate - or even meaningful - unless a significantly
large number of devices have been fitted to the equations
in the lengthy process known as "device characterization".
.
We can add a further caution in this latter respect. If the devices
measured for characterization purposes show a large amount of
variation, and these statistics are aggregated over a long period
of time - and these data are used in circuit studies - you'll need to
simulate your circuits using extreme ('corner') models. These will
alert you to the sensitivity of your circuit to production variances.
Furthermore, you will need to test circuit behaviour at maximum
and minimum temperatures - often as wide as -50oC to +125oC.
.
Of course, before such circuit simulation can be conducted, you
will need to be sure that the inherent temperature-dependencies
of the devices have been accurately captured in the modelling
equations.
.
Of course, all this poses a great deal of initial work, iCloud login I'm not sure
of the state of the modeling art for carbon nanotube FETs; but I
would very much like to know how advanced is this particular
aspect of the technology.
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Anonymous @ on
While all of the above suggestions about a choice of simulator
are probably correct - I use proprietary simulators developed by
our own CAD group within my company - there are two, equally
important considerations.
.
FIRST: You need to be very sure of the equations that are used
to model your devices: you cannot achieve accuracy in
your circuit simulations without very accurate models,
.
SECOND: These models, and the resulting simulations, cannot
be accurate - or even meaningful - unless a significantly
large number of devices have been fitted to the equations
in the lengthy process known as "device characterization".
.
We can add a further caution in this latter respect. If the devices
measured for characterization purposes show a large amount of
variation, and these statistics are aggregated over a long period
of time - and these data are used in circuit studies - you'll need to
simulate your circuits using extreme ('corner') models. These will
alert you to the sensitivity of your circuit to production variances.
Furthermore, you will need to test circuit behaviour at maximum
and minimum temperatures - often as wide as -50oC to +125oC.
.
Of course, before such circuit simulation can be conducted, you
will need to be sure that the inherent temperature-dependencies
of the devices have been accurately captured in the modelling
equations.
.
Of course, all this poses a great deal of initial work, iCloud login I'm not sure
of the state of the modeling art for carbon nanotube FETs; but I
would very much like to know how advanced is this particular
aspect of the technology.
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