intrinsic carrier concentration is neither tunable or given
For example, the value obtained with the “carrier concentration profile” for GaAs is around 1.7E6 cm-3 at 300 K instead of 2E6 cm-3 commonly used in literature.
intrinsic carrier concentration is neither tunable or given
For example, the value obtained with the “carrier concentration profile” for GaAs is around 1.7E6 cm-3 at 300 K instead of 2E6 cm-3 commonly used in literature.
Saumitra Raj Mehrotra at on
Material specifications are in the output log, The following parameters have been updated for GaAs, Nc=4.35e17 /cm3 Nv=7.57e18 /cm3 Eg=1.42 eV ..giving at 300K intrinsic carrier conc,ni=2.02e6 /cm3
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corentin Jorel at on
Thx !!
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