[[Image(Cover.gif,500)]] =='''Negative-bias temperature instability (NBTI)'''== ===[[Resource(devrel)]]=== [[Image(MIG1.PNG)]] [[Image(MIG2.PNG)]] [[Image(MIG3.PNG)]] [[Image(MIG4.PNG)]] [[Image(MIG5.PNG)]] [[Image(MIG6.PNG)]] MIG contains a demonstration of Negative Bias Temperature Instability (NBTI), which is a major reliability issue for nanoscale MOS devices. When a device is stressed at negative voltage, depassivation of Si-H bonds in the interface occurs. As a result, interface traps are generated (reaction) and the resulting hydrogen species diffuses away from the interface (diffusion). Hence, device characteristics (threshold voltage, mobility, drain current, etc) degrades with time and such degradation satisfies a power law (time^n) formula. Implementing such Reaction-diffusion (RD) model, MIG shows how threshold voltage of a PMOS device can change with time at different voltages and temperatures. ---- =='''MEMS'''== ===[[Resource(cvgraph)]]=== [[Image(/site/resources/2013/06/18282/2622/screen01.JPG,120,right)]] [[Image(/site/resources/2013/06/18282/2622/screen02.JPG,120,right)]] [[Image(/site/resources/2013/06/18282/2622/screen03.JPG,120,right)]] [[Image(/site/resources/2013/06/18282/2622/screen04.JPG,120,right)]] [[Image(/site/resources/2013/06/18282/2622/screen05.JPG,120,right)]] MEMS actuators have multiple design applications. Understanding their behavior as well as the ability to predict their actuation characteristics and voltage response is important when designing these actuators. In order to determine how these devices will behave, designers have to perform computationally expensive finite element simulations or design experiments that can be very time consuming. This tool is created to allow users to enter basic information about a MEMS actuator and obtain a reasonably accurate estimation of the actuation response of the actuator. A compact model based on a scaling theory developed in Ref. 1 provides an almost instantaneous estimation of the actuation voltages (pull-in voltage and pull-out voltage) and the hysteretic CV characteristics (for both below pull-in and post pull-in states). A more comprehensive numerical simulation option, which employs the Kirchoff-Love plate equation, is also available. Quasi-static and dynamic response for cantilever, fixed-fixed and circular beam shapes can be obtained using the numerical simulation. A method-of-moments based 3D Poisson solver can also be invoked if necessary. For users who want to understand the basics of MEMS actuator operation, quasi-static and dynamic simulations can be performed for a simple spring-mass model. ---- =='''Time Dependent Dielectric Breakdown(TDDB)'''== ===[[Resource(tddb)]]=== Polymer based dielectric materials have potential applications in micro-electronics, power electronics, photovoltaics, flexible electronics, MEMS and sensing industries. The possibility of premature electrical breakdown due to high electric fields, especially at high frequencies and in high ambient temperature and humidity conditions, has restricted its widespread adoption. In this work, we establish dielectric heating as the primary AC degradation mechanism in polymers, and develop an analytical dielectric breakdown model that satisfactorily explains measured trends in constant and ramp stress tests under both AC and DC electric fields. We also study and quantify the effect of exposure to ambient relative humidity on the electrical breakdown lifetime of polymer dielectrics. Our study provides a fundamental physical understanding of the frequency, ambient humidity and thickness dependences of lifetime and breakdown strength for polymer dielectrics; the proposed breakdown model suggests far more optimistic prospects when accelerated test results are scaled to normal operating conditions. This TDDB nanohub tool can simulate the following four structures: * Thick Dielectric * Single Thin Capacitor * Series Thin Capacitors * Ferroelectric BD ---- =='''Hot Carrier Injection(HCI)'''== ---- =='''Characterization'''== * CP * SILC