Tags: tunnel FETs (TFET)

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Description

energy band diagram

The tunnel field-effect transistor (tunnel FET or TFET) is a transistor that operate by tunneling through the source/drain barrier rather than diffusion over the barrier. Tunnel FETs belongs to the family of so-called steep-slope devices which can switch on/off at lower voltages than metal oxide semiconductor FETs (MOSFETs) and are being investigated for ultra-low-power electronic applications.

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  1. Praveen C S

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  2. Kalyani Bhosale

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  3. Ozgur Polat

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  4. Gopinath S

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  5. Tunnel FET Learning Tutorial

    Presentation Materials | 05 Mar 2014 | Contributor(s):: Mark Cheung

    This module covers: Field-effect transistor (FET) review,Motivation for TFET,Device design and simulation,Literature review,Simulation results

  6. Tunnel FETs - Device Physics and Realizations

    Online Presentations | 10 Jul 2013 | Contributor(s):: Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.

  7. Course on Beyond CMOS Computing

    Teaching Materials | 06 Jun 2013 | Contributor(s):: Dmitri Nikonov

    Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of development, the semiconductor industry (with a leading role of Intel) has shrunk the size of these...

  8. Trevin Gandhi

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  10. Bhupesh Bishnoi

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  11. what is drive current

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  12. Vivek Asthana

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  13. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    Online Presentations | 05 Aug 2010 | Contributor(s):: Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..Learning Objectives:GNR TFET Simulation pz Tight-Binding Orbital Model 3D Schrödinger-Poisson Solver Device Simulation Structure Optimization (Doping, Lg, VDD) LER => Localized Band Gap States LER =>...

  14. Junzhe Geng

    Junzhe Geng is a graduate student in professor Gerhard Klimeck’s research group at Purdue Unviersity. He obtained his Bachelor’s degree in electrical engineering from Purdue in 2010....

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  15. Alexander Kloes

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