Description

The tunnel field-effect transistor (tunnel FET or TFET) is a transistor that operate by tunneling through the source/drain barrier rather than diffusion over the barrier. Tunnel FETs belongs to the family of so-called steep-slope devices which can switch on/off at lower voltages than metal oxide semiconductor FETs (MOSFETs) and are being investigated for ultra-low-power electronic applications.

Questions & Answers (1-3 of 3)

1. Is screening length in tunneling probability equation actually the tunneling barrier length?

   Q&A|Closed | Responses: 1

   Drain current of a TFET is proportioned to tunneling probability Tt. As it can be seen from the picture, Λ is screening length. my question is that can we call Λ, "tunneling...

   https://nanohub.org/answers/question/1858

2. Support for Cadence Tools

   Q&A|Closed | Responses: 0

   Hi,

   First of all, I am really thankful for the working model of III-IV Tunnel FET Model. I have used VerilogA model files with Cadence Tools and they are working fine. Is it...

   https://nanohub.org/answers/question/1640

3. what is drive current

   Q&A|Closed | Responses: 1

   https://nanohub.org/answers/question/864