Tags: tight-binding

Description

In solid-state physics, the tight binding model is an approach to the calculation of electronic band structure using an approximate set of wave functions based upon superposition of wave functions for isolated atoms located at each atomic site. The method is closely related to the linear combination of atomic orbitals molecular orbital method used for molecules. Tight binding calculates the ground state electronic energy and position of band gaps for a molecule.

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  1. Transferable Tight Binding Model for Strained Heterostructures

    Online Presentations | 22 Oct 2016 | Contributor(s):: Yaohua Tan, Michael Povolotskyi, Tillmann Christoph Kubis, Timothy Boykin, Gerhard Klimeck

    IWCE 2015 presentation.

  2. Valley splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder, and alloy disorder

    Papers | 14 Jan 2008 | Contributor(s):: Neerav Kharche, marta prada, Timothy Boykin, Gerhard Klimeck

    Valley splitting (VS) in strained SiGe/Si/SiGe quantum wells grown on (001) and 2° miscut substrates is computed in a magnetic field. Calculations of flat structures significantly overestimate, while calculations of perfectly ordered structures underestimate experimentally observed VS. Step...

  3. Vidur Vidur

    https://nanohub.org/members/20084