Resources (1-12 of 12)

1. WHiTe Compact Models

   19 Mar 2023 | Compact Models | Contributor(s):

   By Neal Graham Wood

   This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

   https://nanohub.org/publications/339/?v=12

2. WHiTe Compact Models

   14 Jun 2022 | Compact Models | Contributor(s):

   By Neal Graham Wood

   This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

   https://nanohub.org/publications/339/?v=11

3. WHiTe Compact Models

   30 Oct 2021 | Compact Models | Contributor(s):

   By Neal Graham Wood

   This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

   https://nanohub.org/publications/339/?v=10

4. WHiTe Compact Models

   28 Aug 2021 | Compact Models | Contributor(s):

   By Neal Graham Wood

   This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

   https://nanohub.org/publications/339/?v=9

5. WHiTe Compact Models

   06 Aug 2021 | Compact Models | Contributor(s):

   By Neal Graham Wood

   This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

   https://nanohub.org/publications/339/?v=8

6. WHiTe Compact Models

   01 Nov 2020 | Compact Models | Contributor(s):

   By Neal Graham Wood

   This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET...

   https://nanohub.org/publications/339/?v=7

7. WHiTe Compact Models

   13 Sep 2020 | Compact Models | Contributor(s):

   By Neal Graham Wood

   This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...

   https://nanohub.org/publications/339/?v=6

8. WHiTe (Wood-High-Temperature) Compact Models

   21 May 2020 | Compact Models | Contributor(s):

   By Neal Graham Wood

   This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...

   https://nanohub.org/publications/339/?v=4

9. WHiTe (Wood-High-Temperature) Compact Models

   16 Apr 2020 | Compact Models | Contributor(s):

   By Neal Wood

   Toshiba Europe Limited

   This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...

   https://nanohub.org/publications/339/?v=3

10. WHiTe (Wood-High-Temperature) Compact Models

    10 Mar 2020 | Compact Models | Contributor(s):

    By Neal Graham Wood

    This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...

    https://nanohub.org/publications/339/?v=2

11. WHiTe (Wood-High-Temperature) Compact Models

    25 Feb 2020 | Compact Models | Contributor(s):

    By Neal Graham Wood

    This package provides a set of 4H silicon carbide high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a junction...

    https://nanohub.org/publications/339/?v=1

12. UARK SiC Power MOSFET Model

    22 Feb 2017 | Compact Models | Contributor(s):

    By Mihir Mudholkar¹, Shamim Ahmed¹, Ramchandra Kotecha¹, Ty McNutt¹, Arman Ur Rashid¹, Tom Vrotsos¹, Alan Mantooth¹

    University of Arkansas Fayetteville

    A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching...

    https://nanohub.org/publications/152/?v=1