Tags: NEGF

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The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.

Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.

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  1. Zain. Y. Mijbil

    Ph.D. Student at Lancaster University under the supervision of Prof. C.J.Lambert.

    https://nanohub.org/members/85629

  2. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    Papers | 28 Jun 2013 | Contributor(s):: Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...

  3. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    Papers | 28 Jun 2013 | Contributor(s):: raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...

  4. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    Papers | 28 Jun 2013 | Contributor(s):: Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...

  5. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    Papers | 28 Jun 2013 | Contributor(s):: Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...

  6. Exploring New Channel Materials for Nanoscale CMOS

    Papers | 28 Jun 2013 | Contributor(s):: Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-# dielectrics, and...

  7. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    Papers | 28 Jun 2013 | Contributor(s):: Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...

  8. naveen kaushik

    https://nanohub.org/members/83665

  9. Course on Beyond CMOS Computing

    Teaching Materials | 06 Jun 2013 | Contributor(s):: Dmitri Nikonov

    Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of development, the semiconductor industry (with a leading role of Intel) has shrunk the size of these...

  10. Joshua Obodo

    https://nanohub.org/members/79273

  11. farha diba sumana

    https://nanohub.org/members/71370

  12. What can be done with help on NEGF formalism as final year BSc project?

    Q&A|Closed | Responses: 0

    I have been studying the nanoelectronics lectures by Dr. Supriyo Datta & also followed his NanohubU...

    https://nanohub.org/answers/question/1073

  13. Krishnakali Chaudhuri

    https://nanohub.org/members/70104

  14. Kai Kwok

    Kai H. Kwok (S’88-M’01-SM’07, IEEE) received the B.A.Sc. degree in Computer Engineering at University of Waterloo, Waterloo, ON, Canada, in 1993. He then received the M.A.Sc....

    https://nanohub.org/members/64072

  15. Bhupesh Bishnoi

    https://www.iitk.ac.in/new/bhupesh-bishnoi

    https://nanohub.org/members/62512

  16. Dissipative Quantum Transport in Semiconductor Nanostructures

    Papers | 28 Dec 2011 | Contributor(s):: Peter Greck

    In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism, called Büttiker Probes, is introduced. Then, we assess the properties of the Büttiker Probe model...

  17. Abu Raihan

    https://nanohub.org/members/57265

  18. Green's Functions Method Explained

    Teaching Materials | 10 Aug 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This is a tutorial on non-equilibrium Green's functions.

  19. ZAHRA AHANGARI

    https://nanohub.org/members/56016

  20. How to consider electron-photon interaction w/o using self-energy?

    Q&A|Closed | Responses: 0

    Hi, In negf, interactions are considered as self-energies. For electron-photon interaction, a perturbation Hamiltonian is derived and then self-energy is found using coupled-field theory. Now,...

    https://nanohub.org/answers/question/799