Tags: NEGF

Description

The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.

Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.

All Categories (1-20 of 214)

  1. ECE 495N: Fundamentals of Nanoelectronics Lecture Notes (Fall 2009)

    Teaching Materials | 04 Feb 2010 | Contributor(s):: Mehdi Salmani Jelodar, Supriyo Datta (editor)

    Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.

  2. 2003 Molecular Conduction Workshop Agenda

    Presentation Materials | 09 Jul 2003

    This workshop brought together leading groups in this field to discuss status and key challenges in molecular electronics. Both experimental and theoretical/modeling efforts were discussed.

  3. 2004 Computational Materials Science Summer School

    Workshops | 07 Jun 2004

    This short course will explore a range of computational approaches relevant for nanotechnology.

  4. 2004 Linking Bio and Nano Symposium

    Workshops | 26 Jul 2004

    Explore ways universities can work together in Bio-NanoTechnology. Discover research opportunities in this emerging area. Network with professionals and researchers who share common interests. Hear the latest on current research topics

  5. 2004 Molecular Conduction Workshop

    Workshops | 08 Jul 2004

    The tutorials supplied below were part of the Molecular Conduction Workshop held at Northwestern University in July of 2004.

  6. Jul 20 2009

    2009 NCN@Purdue Summer School: Electronics from the Bottom Up

    Electronics from the Bottom Up seeks to bring a new perspective to engineering education -- one that is designed to help realize the opportunities of nanotechnology. Ever since the birth of...

    https://nanohub.org/events/details/231

  7. 2009 NCN@Purdue Summer School: Electronics from the Bottom Up

    Workshops | 09 Jul 2009 | Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller

    The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.

  8. Jul 12 2010

    2010 NCN@Purdue Summer School: Electronics from the Bottom Up

    This year’s summer school will have two components: a focus on nanoelectronic devices, with an introduction to spintronics and, second, tutorials on selected topics in nanotechnology. First, we use...

    https://nanohub.org/events/details/270

  9. 3D Topological Insulator Nanowire NEGF Simulation on GPU

    Downloads | 23 May 2015 | Contributor(s):: Gaurav Gupta

    This code developed in C and CUDA simulates the carrier transport in three-dimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or without impurities, edge defects, acoustic phonons and vacancies for semi-infinite or metallic...

  10. how do we impose G

    Q&A|Open | Responses: 1

    According to Kadanoff-Baym book, formula (2-2), one has: = -i G

    https://nanohub.org/answers/question/254

  11. How to consider electron-photon interaction w/o using self-energy?

    Q&A|Closed | Responses: 0

    Hi, In negf, interactions are considered as self-energies. For electron-photon interaction, a perturbation Hamiltonian is derived and then self-energy is found using coupled-field theory. Now,...

    https://nanohub.org/answers/question/799

  12. Issue in obtaining solution of Poisson eq. for self-consistent calculation in NEGF

    Q&A|Closed | Responses: 1

    Hi,

    I’ve been working on an exercise matlab code posted by Prof. S. Datta. ( https://nanohub.org/answers/question/1383

  13. NEGF Formulism Question

    Q&A|Open | Responses: 1

    Hi,

    I’m not too familiar with the NEGF formalism. But had a very basic question.

    I’ve read that NEGF can be viewed as a “Quantum Boltzmann Equation”. When...

    https://nanohub.org/answers/question/8

  14. Quantum dots

    Q&A|Open | Responses: 1

    What I want to do is building an aluminum quantum dot coupled to aluminum leads to observe Coulomb Blockade. To form the tunnel barriers we oxidize the Al in a plasma without any detailed...

    https://nanohub.org/answers/question/2

  15. Time-dependent NEGF

    Q&A|Open | Responses: 1

    In the time-dependent NEGF equation, given a sigma_in(t,t’) due to the dot, I am getting an I-V equation that is making it difficult for me to group terms. For instance, looking at...

    https://nanohub.org/answers/question/6

  16. What can be done with help on NEGF formalism as final year BSc project?

    Q&A|Closed | Responses: 0

    I have been studying the nanoelectronics lectures by Dr. Supriyo Datta & also followed his NanohubU...

    https://nanohub.org/answers/question/1073

  17. Which tool can I use to simulate RITD?

    Q&A|Closed | Responses: 0

    https://nanohub.org/answers/question/1359

  18. A Matlab 1D-Poisson-NEGF simulator for 2D FET

    Downloads | 04 Mar 2024 | Contributor(s):: Chien-Ting Tung

    A Matlab 1D-Poisson-NEGF solver to calculate a 2D FET where the channel is only one atom thick. It assumes the channel thickness is only one point and solves the 1D Poisson and NEGF self-consistently.It also utilizes a Fermi-Dirac integral table from...

  19. A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors

    Papers | 19 Oct 2006 | Contributor(s):: Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

    In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of...

  20. A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation

    Papers | 30 Oct 2006 | Contributor(s):: Jing Wang, POLIZZI ERIC, Mark Lundstrom

    The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation...