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CQT Lecture 3: Probabilities, Wavefunctions and Green Functions
Online Presentations | 30 Nov 2006 | Contributor(s):: Supriyo Datta
Objective: To extend the simple model from Lecture 2 into the full-blown model combines the NEGF (Non-Equilibrium Green Function) method with the Landauer approach.
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CQT Lecture 2: Electrical Resistance - A Simple Model
Online Presentations | 30 Nov 2006 | Contributor(s):: Supriyo Datta
Objective:To introduce a simple quantitative model for describing current flow in nanoscalestructures and relate it to well-known large scale properties like Ohm’s Law.
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CQT Lecture 1: Nanodevices and Maxwell's Demon
Online Presentations | 30 Nov 2006 | Contributor(s):: Supriyo Datta
Objective: To illustrate the subtle interplay of dynamics and thermodynamicsthat distinguishes transport physics.
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CQT Introduction
Online Presentations | 30 Nov 2006 | Contributor(s):: Supriyo Datta
A short overview of this series of four lectures is given.
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CQT: Concepts of Quantum Transport
Courses | 30 Nov 2006 | Contributor(s):: Supriyo Datta
Note: For an expanded version of these lectures see Datta's 2008 NCN@Purdue Summer School presentations on Nanoelectronics and the Meaning of Resistance. How does the resistance of a conductor change as we shrink its length all the way down to a few atoms? This is a question that...
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MOSCNT: code for carbon nanotube transistor simulation
Downloads | 14 Nov 2006 | Contributor(s):: Siyu Koswatta, Jing Guo, Dmitri Nikonov
Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that...
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recursive algorithm for NEGF in Matlab
Downloads | 13 Nov 2006 | Contributor(s):: Dmitri Nikonov, Siyu Koswatta
This zip-archive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3-matrix multiplication used in the non-equilibrium Green’s function (NEGF) method.recuresealg3d.m- works for 3-diagonal matricesrecuresealgblock3d.m- works for 3-block-diagonal...
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Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green's function formalism
Papers | 31 Oct 2006 | Contributor(s):: POLIZZI ERIC, Supriyo Datta
This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the Non-Equilibrium Green's Functions (NEGF) formalism and the variational form of the problem is solved using...
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Non Equilibrium Green's Functions for Dummies: Introduction to the One Particle NEGF equations
Papers | 30 Oct 2006 | Contributor(s):: Magnus Paulsson
Non equilibrium Green's function methods are regularly used to calculate current and charge densities in nanoscale (both molecular and semiconductor) conductors under bias. This method is mainly used for ballistic conduction but may be extended to include inelastic scattering. In this tutorial...
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Modeling Quantum Transport in Nanoscale Transistors
Papers | 30 Oct 2006 | Contributor(s):: ramesh venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new...
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Carbon Nanotube Electronics: Modeling, Physics, and Applications
Papers | 30 Oct 2006 | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ...
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A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
Papers | 30 Oct 2006 | Contributor(s):: Jing Wang, POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation...
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Electrical Resistance: an Atomistic View
Papers | 26 Oct 2006 | Contributor(s):: Supriyo Datta
This tutorial article presents a “bottom-up” view of electrical resistance starting from something really small, like a molecule, and then discussing the issues that arise as we move to bigger conductors. Remark ably enough, no serious quantum mechanics is needed to understand electrical...
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Nanoscale MOSFETs: Physics, Simulation and Design
Papers | 26 Oct 2006 | Contributor(s):: Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer aided...
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Modeling of Nanoscale Devices
Papers | 19 Oct 2006 | Contributor(s):: M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introductionto the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale electronic devices with quantum mechanicaland atomistic effects. We first review the basis for the...
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A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
Papers | 19 Oct 2006 | Contributor(s):: Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of...
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Introduction to the Keldysh Nonequilibrium Green Function Technique
Papers | 06 Oct 2006 | Contributor(s):: A. P. Jauho
Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems.The technique is somewhat subtle, and a rigorous treatment would require much more than we have at our disposal, see, for example, the text-bookk by Haug and Jauho [1].The...
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nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
Papers | 06 Oct 2006 | Contributor(s):: Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space approach that...
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Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
Papers | 28 Sep 2006 | Contributor(s):: Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the...
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Device Physics and Simulation of Silicon Nanowire Transistors
Papers | 28 Sep 2006 | Contributor(s):: Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...