Tags: NCN Transistor @ 75

Description

1st transistorIn celebration of the 75th anniversary of the invention of the transistor by John Bardeen, Walter Brattain and William Shockley while at Bell Labs in Murraray Hill, New Jersey, nanoHUB has curated a collection of transistor-related nanoHUB resources including courses, simulation tools, presentations, and compact models.

Transistor @ 75 information page.

Tools (1-7 of 7)

  1. FETToy

    Tools | 14 Feb 2006 | Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

    Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

  2. Cylindrical CNT MOSFET Simulator

    Tools | 22 Jul 2008 | Contributor(s):: Gloria Wahyu Budiman, Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom

    Simulate 2-D electrons transport in CNTFET

  3. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

    Tools | 16 Jul 2008 | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor devices

  4. MuGFET

    Tools | 17 Jan 2008 | Contributor(s):: SungGeun Kim, Gerhard Klimeck, Sriraman Damodaran, Benjamin P Haley

    Simulate the nanoscale multigate-FET structures (finFET and nanowire) using drift diffusion approaches

  5. BJT Lab

    Tools | 06 Feb 2008 | Contributor(s):: Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Dragica Vasileska, Gloria Wahyu Budiman

    This tool simulates a Bipolar Junction Transistor (BJT) using a 2D mesh. Powered by PADRE.

  6. NanoMOS

    Tools | 19 May 2006 | Contributor(s):: , Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Yunfei Gao, Xufeng Wang, Mark Lundstrom

    2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs

  7. MOSFet

    Tools | 30 Mar 2006 | Contributor(s):: Shaikh S. Ahmed, Saumitra Raj Mehrotra, SungGeun Kim, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman

    Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)