-
Illinois ECE 598EP Lecture 8 - Hot Chips: Thermal Conductivity of Solids
24 Jun 2009 | Contributor(s):: Eric Pop, Omar N Sobh
Thermal Conductivity of SolidsTopics: Kinetic Theory of Energy Transport Simple Kinetic Theory Assumptions Phonon MFP and Scattering Time Silicon Film Thermal Conductivity Silicon Nanowire Thermal Conductivity Isotope Scattering Electron Thermal Conductivity Thermal Conductivity of Cu and Al
-
Band Structure Lab: First-Time User Guide
Teaching Materials | 15 Jun 2009 | Contributor(s):: Abhijeet Paul, Benjamin P Haley, Gerhard Klimeck
This document provides useful information about Band Structure Lab. First-time users will find basic ideas about the physics behind the tool such as band formation, the Hamiltonian description, and other aspects. Additionally, we provide explanations of the input settings and the results of the...
-
Band Structure Lab Demonstration: Bulk Strain
Animations | 12 Jun 2009 | Contributor(s):: Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
-
OMEN Nanowire Demonstration: Nanowire Simulation and Analysis
Animations | 11 Jun 2009 | Contributor(s):: Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a nanowire using OMEN Nanowire. Several powerful analytic features of this tool are demonstrated.
-
KP Nanowire/UTB FET
Tools | 22 Mar 2009 | Contributor(s):: Mincheol Shin
Simulate Nanowire/UTB FETs Using KP method
-
OMEN Nanowire: First-Time User Guide
Teaching Materials | 21 Feb 2009 | Contributor(s):: SungGeun Kim, Benjamin P Haley, Mathieu Luisier, Saumitra Raj Mehrotra, Gerhard Klimeck
This is the first-time user guide for OMEN Nanowire. In addition to showing how the tool operates, it briefly explains what the OMEN Nanowire is, what it can do, and the input and output relationship.NCN@Purdue[1] Sung Dae Suk, et. al., IEDM, 2005, "High Performance 5nm radius Twin Silicon...
-
OMEN Nanowire
Tools | 02 Sep 2008 | Contributor(s):: SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck, Hesameddin Ilatikhameneh
Full-band 3D quantum transport simulation in nanowire structure
-
Lecture 2: Thresholds, Islands, and Fractals
Online Presentations | 04 Nov 2008 | Contributor(s):: Muhammad A. Alam
Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via elementary examples. These three concepts will form the theoretical foundation for discussion in Lecture...
-
Lecture 1: Percolation in Electronic Devices
Online Presentations | 04 Nov 2008 | Contributor(s):: Muhammad A. Alam
Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework...
-
Percolation Theory
Courses | 03 Nov 2008 | Contributor(s):: Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or metal crystals in nanocrystal Flash memory, the number of Nanowires in a flexible nanoNET...
-
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
Tools | 16 Jul 2008 | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor devices
-
Can we define unique effective masses in Si nanowires?
Teaching Materials | 06 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the users that for small nanostructures the concept of the effective mass becomes vague and in order to properly describe nanostructures one has to take into account the numerically calculated dispersion relation. This is clearly illustrated on the example of Si nanowires...
-
Some Important Aspects of the Chemistry of Nanomaterials
Online Presentations | 01 Jul 2008 | Contributor(s):: C.N.R. Rao
Keynote address for the launch of the Center for Analytical Instrumentation Development.
-
BNC Annual Research Review: Thin-Film Electronics using Nanowire Transistors
Online Presentations | 06 Jun 2008 | Contributor(s):: David Janes
This presentation is part of a collection of presentations describing the projects, people, and capabilities enhanced by research performed in the Birck Center, and a look at plans for the upcoming year.
-
Which tool can I used to do harmonic analysis of a ZnO nanowire?
Q&A|Closed | Responses: 1
I am trying to study the applied voltage-displacement relationship for a ZnO nanowire. In the end I want to find...
https://nanohub.org/answers/question/67
-
The electrical field from the gate of CNFET can not affect the transistor.
Q&A|Open | Responses: 2
Hi all,
I tried to fabricate the Carbon nanotube field effect transistor (CNFET) for around half a year, however, none of them is working till now. The main problem was the source to...
https://nanohub.org/answers/question/60
-
Nanowire: First-Time User Guide
Teaching Materials | 05 May 2008 | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra
Nanowire is a simulation tool for silicon nanowire FET's in the nanometer regime (diameter
-
Basma Mohamad Zeineddine EL ZEIN
https://nanohub.org/members/28430
-
MuGFET: First-Time User Guide
Teaching Materials | 28 Apr 2008 | Contributor(s):: SungGeun Kim, Sriraman Damodaran, Benjamin P Haley, Gerhard Klimeck
MuGFET is a simulation tool for nano-scale multi-gate FET structures.This document provides instructions on how to use MuGFET. MuGFET users can use also the PROPHET or the PADRE tool. Either of these provide self-consistent solutions to the Poisson and drift-diffusion equation.At the nanometer...
-
Exploring CMOS-Nano Hybrid Technology in Three Dimensions
Online Presentations | 31 Mar 2008 | Contributor(s):: Wei Wang
CMOS-nano hybrid technology incorporate the advantages of both traditional CMOS and novel nanowire/nanotube structures, which will enhance future IC performances and create long-term breakthroughs. The CMOS-nano hybrid IC can be efficiently fabricated using the 3D integration approach. This talk...