Tags: MOSFET

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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

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  1. Lecture 3B: The Ballistic MOSFET

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    Online Presentations | 10 Sep 2008 | Contributor(s):: Mark Lundstrom

    This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

  2. Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up

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    Online Presentations | 10 Sep 2008 | Contributor(s):: Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins...

  3. Lecture 2: Elementary Theory of the Nanoscale MOSFET

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    Online Presentations | 08 Sep 2008 | Contributor(s):: Mark Lundstrom

    A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.

  4. Lecture 4: Scattering in Nanoscale MOSFETs

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    Online Presentations | 08 Sep 2008 | Contributor(s):: Mark Lundstrom

    No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and...

  5. Lecture 5: Application to State-of-the-Art FETs

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    Online Presentations | 08 Sep 2008 | Contributor(s):: Mark Lundstrom

    The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.

  6. Introduction: Physics of Nanoscale MOSFETs

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    Online Presentations | 26 Aug 2008 | Contributor(s):: Mark Lundstrom

  7. 2008 NCN@Purdue Summer School: Electronics from the Bottom Up

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    Workshops | 26 Aug 2008 | Contributor(s):: Muhammad A. Alam, Supriyo Datta, Mark Lundstrom

    Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two...

  8. Physics of Nanoscale MOSFETs

    3.5 out of 5 stars 

    Courses | 26 Aug 2008 | Contributor(s):: Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...

  9. Lecture 1: Review of MOSFET Fundamentals

    4.0 out of 5 stars 

    Online Presentations | 26 Aug 2008 | Contributor(s):: Mark Lundstrom

    A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.

  10. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

    5.0 out of 5 stars 

    Tools | 16 Jul 2008 | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor devices

  11. MOSFET - Theoretical Exercises

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    Teaching Materials | 03 Aug 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    www.eas.asu.edu/~vasileskNSF

  12. MOSFET Exercise

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    Teaching Materials | 07 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF

  13. How do I derive the 2D electron density used in nano MOSFET calculations?

    Q&A|Open | Responses: 1

    In nanomos-2.5, the density of charge is obtained by multiplying the square of the wavefunction by a prefactor: with semiclassical method, that prefactor is given by

    https://nanohub.org/answers/question/54

  14. Renaud DAVIOT

    __Researcher at [http://inl.cnrs.fr/ INL]__[[BR]]Reconfigurable digital cells with CNT, Nanowires, molecular devices[[BR]]__Teaching at [http://www.cpe.fr/ CPE Lyon] (France)__[[BR]]FPGA, VHDL,...

    https://nanohub.org/members/26856

  15. MOSfet Homework Assignment - Role of Dielectric Constant and Thickness

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    Teaching Materials | 31 Jan 2008 | Contributor(s):: David K. Ferry

    Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters:Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes),poly-Si gate, junction depth of 10 nm (20 nodes), and all other parametersat their nominal preset values.Now, change K to 20,...

  16. Semiconductor Device Education Material

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    Teaching Materials | 28 Jan 2008 | Contributor(s):: Gerhard Klimeck

    This page has moved to "a Wiki page format" When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are...

  17. Is there any free licence drift diffusion device simulator that supports MOS and bipolar devices

    Q&A|Open | Responses: 1

    A sequel to this question is : Is Bambi simulator still available ??

    https://nanohub.org/answers/question/39

  18. Numerical work outs surface potential and capacitance of Mosfets in Matlab

    Q&A|Open | Responses: 1

    how to work out surface potential and capacitance for Mosfets numerically in matlab?

    https://nanohub.org/answers/question/36

  19. transfer characteristic

    Q&A|Open | Responses: 2

    how the transfer characteristic of a mosfet depends on the channel doping?(theory)

    https://nanohub.org/answers/question/31

  20. Simulation of highly idealized, atomic scale MQCA logic circuits

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    Papers | 15 Nov 2007 | Contributor(s):: Dmitri Nikonov, George Bourianoff

    Spintronics logic devices based on majority gates formed by atomic-level arrangements of spins in the crystal lattice is considered. The dynamics of switching is modeled by time-dependent solution of the density-matrix equation with relaxation. The devices are shown to satisfy requirements for...