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Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org
Papers | 19 Mar 2020 | Contributor(s):: Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed
The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...
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Bhavya Bhardwaj
https://nanohub.org/members/265122
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ABACUS—Introduction to Semiconductor Devices
Wiki
When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...
https://nanohub.org/wiki/EduSemiconductor2
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Neilalohith Sharma
https://nanohub.org/members/257041
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Windows based Interactive tool for the simulation of the MOS electrostatics
Downloads | 26 Jun 2019 | Contributor(s):: Biswajeet Sahoo
This is a tool to simulate the MOS electrostatics. It includes the simulation of 2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...
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Windows based Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes
Downloads | 26 Jun 2019 | Contributor(s):: Biswajeet Sahoo
This is a tool to simulate the MOS electrostatics. It includes the simulation of 2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...
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Ubuntu based Interactive tool for the simulation of the MOS electrostatics
Downloads | 26 Jun 2019 | Contributor(s):: Biswajeet Sahoo
This is a tool to simulate the MOS electrostatics. It includes the simulation of 2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work under...
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MOS Simulator
Tools | 25 Jun 2019 | Contributor(s):: Biswajeet Sahoo
National Institute of Technology,Rourkela. This is an Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes
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Franco Vera
Franco Vera is a third year undergraduate at the University of Florida studying Materials Engineering with a focus on Electronic Materials. He is Currently working under Dr. Nancy Ruzycki to create...
https://nanohub.org/members/230324
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Ardinc Edis
https://nanohub.org/members/224255
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MUHAMMAD HUSSAIN
https://nanohub.org/members/219790
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Moore’s Law Extension and Beyond
Online Presentations | 19 Nov 2018 | Contributor(s):: Peide "Peter" Ye
In his talk, Ye will review his research efforts at Purdue on materials, structures and device architecture to support the microelectronic industry and extend Moore’s Law. The goal of the research is that it will lead to smarter, ubiquitous computing technology and keep us healthier,...
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Stephen Remillard
https://nanohub.org/members/202557
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Semiconductor & graphene mixtures, printable, for FETs, VFETS?
Q&A|Closed | Responses: 2
We tried synthesizing diketopyrroles, and we could not make them.
We have fiddled with P3HT, and we are concerned about its long term compatibility with our ionic liquid...
https://nanohub.org/answers/question/2036
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Elmira Tavakkoli
https://nanohub.org/members/196743
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JFETIDG Model for Independent Dual-Gate JFETs
19 Jul 2017 | Compact Models | Contributor(s):
By Colin McAndrew1, Kejun Xia1
NXP Semiconductors
JFETIDG is a compact model for independent dual-gate JFETs. It is also applicable to: resistors with metal shields; the drift region of LDMOS transistors; the collector resistance of vertical...
https://nanohub.org/publications/173/?v=2
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MATLAB: Negative Capacitance (NC) FET Model
Downloads | 05 Dec 2015 | Contributor(s):: Muhammad Abdul Wahab, Muhammad A. Alam
MATLAB model that calculates the Q-V, C-V, and I-V characteristics of the conventional MOSFET and NC-FET.
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A Tutorial Introduction to Negative-Capacitor Landau Transistors: Perspectives on the Road Ahead
Online Presentations | 04 Dec 2015 | Contributor(s):: Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader class of phase-change devices and systems (e.g., transistors, memories, MEMS, logic-in-memory...
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Green Light on Germanium
Online Presentations | 02 Nov 2015 | Contributor(s):: peide ye
This talk will review recent progress as well as challenges on Ge research for future logic applications with emphasis on the breakthrough work at Purdue University on Ge nFET which leads to the demonstration of the world first Ge CMOS circuits on Si substrates. Ge device technology includes...
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how to simulate insulator in a GNRFET with matlab?
Q&A|Closed | Responses: 0
I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...
https://nanohub.org/answers/question/1583