All Categories (21-40 of 53)

1. ECE 606 Lecture 32: MOS Electrostatics I

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   Online Presentations | 19 Nov 2008 | Contributor(s):: Muhammad A. Alam

2. ECE 606 Lecture 33: MOS Electrostatics II

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   Online Presentations | 16 Apr 2009 | Contributor(s):: Muhammad A. Alam

3. ECE 606 Lecture 34: MOSCAP Frequency Response

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   Online Presentations | 16 Apr 2009 | Contributor(s):: Muhammad A. Alam

4. ECE 612 Lecture 3: MOS Capacitors

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   Online Presentations | 09 Sep 2008 | Contributor(s):: Mark Lundstrom

   Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

5. ECE 695A Lecture 13R: Review Questions

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   Online Presentations | 19 Feb 2013 | Contributor(s):: Muhammad Alam

   Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the universal...

6. 

   George Valentin Vintila

   https://nanohub.org/members/302756

7. Illinois ECE 440 Solid State Electronic Devices, Lecture 30: Intro MOS Transistor

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   Online Presentations | 02 Mar 2010 | Contributor(s):: Eric Pop

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8. Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor

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   Online Presentations | 02 Mar 2010 | Contributor(s):: Eric Pop

9. Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage

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   Online Presentations | 02 Mar 2010 | Contributor(s):: Eric Pop

10. Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance

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    Online Presentations | 02 Mar 2010 | Contributor(s):: Eric Pop

11. Illinois ECE 440: MOS Field-Effect Transistor Homework

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    Teaching Materials | 28 Jan 2010 | Contributor(s):: Mohamed Mohamed

    This homework covers Output Characteristics and Mobility Model of MOSFETs.

12. Illinois Tools: MOCA

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    Tools | 28 Mar 2007 | Contributor(s):: Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney, Kyeong-hyun Park

    2D Full-band Monte Carlo (MOCA) Simulation for SOI-Based Device Structures

13. Introduction to nanoMOS

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    Series | 02 Jul 2007 | Contributor(s):: James K Fodor, Jing Guo

    This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the...

14. Modeling Single and Dual-Gate Capacitors using SCHRED

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    Series | 31 Mar 2006 | Contributor(s):: Dragica Vasileska

    SCHRED stands for self-consistent solver of the 1D Poisson and 1D effective mass Schrodinger equation as applied to modeling single gate or dual-gate capacitors. The program incorporates many features such as choice of degenerate and non-degenerate statistics for semiclassical charge description,...

15. MOS Simulator

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    Tools | 21 Jun 2019 | Contributor(s):: Biswajeet Sahoo

    National Institute of Technology,Rourkela. This is an Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes

16. MOSCap

    3.5 out of 5 stars 

    Tools | 06 Apr 2006 | Contributor(s):: Akira Matsudaira, Saumitra Raj Mehrotra, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska

    Capacitance of a MOS device

17. MOSCap Demonstration: MOS Capacitor Simulation

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    Animations | 03 Jun 2009 | Contributor(s):: Gerhard Klimeck, Benjamin P Haley

    This video shows the simulation of a MOS capacitor using the MOSCAP tool. Several powerful analytic features of this tool are demonstrated.

18. MOSCap: First-Time User Guide

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    Teaching Materials | 27 Mar 2009 | Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck

    This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature,...

19. MOSFET Exercise

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    Teaching Materials | 07 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF

20. MOSfet Homework Assignment - Role of Dielectric Constant and Thickness

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    Teaching Materials | 31 Jan 2008 | Contributor(s):: David K. Ferry

    Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters:Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes),poly-Si gate, junction depth of 10 nm (20 nodes), and all other parametersat their nominal preset values.Now, change K to 20,...