Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

All Categories (101-120 of 360)

1. Keithley 4200-SCS Lecture 12: Ultra-fast I-V for Pulsed and Transient Characterization

   Online Presentations | 24 Jan 2011 | Contributor(s):: Lee Stauffer

2. Keithley 4200-SCS Lecture 01: Introduction - System Overview - DC I-V Source Measurement

   Online Presentations | 20 Jan 2011 | Contributor(s):: Lee Stauffer

   Introduction to Device Characterization -System Overview: System Architecture, Hardware Features and Software Features -Precision DC I-V Source-Measure Features and Concepts.

3. Keithley 4200-SCS Lecture 02: Basics of Keithley Interactive Test Environment (KITE)

   Online Presentations | 20 Jan 2011 | Contributor(s):: Lee Stauffer

4. Keithley 4200-SCS Lecture 03: More KITE Setup and Features

   Online Presentations | 20 Jan 2011 | Contributor(s):: Lee Stauffer

5. Keithley 4200-SCS Lecture 04: Speed and Timing Considerations

   Online Presentations | 20 Jan 2011 | Contributor(s):: Lee Stauffer

6. Keithley 4200-SCS Lecture 05: Low Current and High Resistance Measurements

   Online Presentations | 20 Jan 2011 | Contributor(s):: Lee Stauffer

7. Keithley 4200-SCS Lecture 06: Troubleshooting

   Online Presentations | 20 Jan 2011 | Contributor(s):: Lee Stauffer

8. Keithley 4200-SCS Lecture 07: KCON Utility Overview

   Online Presentations | 20 Jan 2011 | Contributor(s):: Lee Stauffer

9. Keithley 4200-SCS Lecture 08: 4210 CVU Instrument Module - Overview

   Online Presentations | 20 Jan 2011 | Contributor(s):: Lee Stauffer

   Theory of Operation and Measurement Overview

10. Keithley 4200-SCS Lecture 09: 4210 CVU Instrument Module - Measurement Techniques I

    Online Presentations | 20 Jan 2011 | Contributor(s):: Lee Stauffer

    Measurement Techniques and Optimization

11. Keithley 4200-SCS Lecture 10: 4210 CVU Instrument Module - Measurement Techniques II

    Online Presentations | 20 Jan 2011 | Contributor(s):: Lee Stauffer

    Measurement Techniques and Optimization

12. Keithley 4200-SCS: KITE Demo

    Online Presentations | 20 Jan 2011 | Contributor(s):: Lee Stauffer

13. Keithley 4200-SCS Lecture 11: 4210 CVU Instrument Module - Troubleshooting

    Online Presentations | 20 Jan 2011 | Contributor(s):: Lee Stauffer

14. Device Characterization with the Keithley 4200-SCS

    Courses | 20 Jan 2011 | Contributor(s):: Lee Stauffer

    This training session is based on the Keithley 4200-SCS Semiconductor Characterization System. It is intended for beginning to intermediate users. It covers basic concepts, both of the instrument, as well as general measurement considerations.

15. Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org

    Online Presentations | 16 Dec 2010 | Contributor(s):: Gerhard Klimeck

    At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. Two electronic...

16. Chemically Enhanced Carbon-Based Nanomaterials and Devices

    Online Presentations | 09 Nov 2010 | Contributor(s):: Mark Hersam

    Carbon-based nanomaterials have attracted significant attention due to their potential to enable and/or improve applications such as transistors, transparent conductors, solar cells, batteries, and biosensors. This talk will delineate chemical strategies for enhancing the electronic and optical...

17. Nanoelectronic Devices, With an Introduction to Spintronics

    Courses | 09 Sep 2010 | Contributor(s):: Supriyo Datta, Mark Lundstrom

        Nanoelectronic devices are at the heart of today's powerful computers and are also of great interest for many emerging applications including energy conversion, sensing and alternative computing paradigms. Our objective, however, is not to discuss specific devices or...

18. Discussion Session 2 (Lectures 3 and 4)

    Online Presentations | 08 Sep 2010 | Contributor(s):: Supriyo Datta

19. Lecture 3: Introduction to NEGF

    Online Presentations | 08 Sep 2010 | Contributor(s):: Supriyo Datta

20. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    Online Presentations | 05 Aug 2010 | Contributor(s):: Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..Learning Objectives:GNR TFET Simulation pz Tight-Binding Orbital Model 3D Schrödinger-Poisson Solver Device Simulation Structure Optimization (Doping, Lg, VDD) LER => Localized Band Gap States LER =>...