MOSFet

By Shaikh S. Ahmed1; Saumitra Raj Mehrotra2; SungGeun Kim2; Matteo Mannino2; Gerhard Klimeck2; Dragica Vasileska3; Xufeng Wang2; Himadri Pal2; Gloria Wahyu Budiman2

1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

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Version 1.9.1 - published on 06 Dec 2017

doi:10.4231/D34T6F54G cite this

This tool is closed source.

First-Time User Guide View All Supporting Documents

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465 Obtaining simulation data
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457 how to include other than gaussian doping density in the tool
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456 how to include other than gaussian doping density in the tool
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455 how to do channel tapering
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454 how to include different materials in sio2
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255 how nanohub differentiate between mask length (Lmask) and effective length (Leff) for MOSFET
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86 Short channel modeling using this tool?
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