Nanosheet FET

By Jing Guo1; Ning Yang1; Qimao Yang1

1. University of Florida

Simulate Nanosheet FET and FinFET based on Quantum Transport

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Version 1.2 - published on 03 Oct 2023

doi:10.21981/1R27-EN52 cite this

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Abstract

This tool calculates ballistic I-V characteristics for nanosheet FETs with 2D semiconductor materials by solving a quantum transport equation self-consistently with Poisson equation. FINFET is a specific case with number of sheets equal to 1. The channel materials are monolayer sheets of van der Waals (vdW) 2D semiconductors. The tool output the I-V characteristics, potential and charge profile, as well as quantum transmission and local density of states.

 

References

[1] L. Liu, Y. Lu, and J. Guo, "Monolayer MoS2 Field-Effect Transistors at the Scaling Limit," IEEE Trans. Electron Devices, vol. 60, p. 4133, 2013.

Cite this work

Researchers should cite this work as follows:

  • Jing Guo, Ning Yang, Qimao Yang (2023), "Nanosheet FET," https://nanohub.org/resources/nanosheetfet. (DOI: 10.21981/1R27-EN52).

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