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Nanosheet FET
Simulate Nanosheet FET and FinFET based on Quantum Transport
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Abstract
This tool calculates ballistic I-V characteristics for nanosheet FETs with 2D semiconductor materials by solving a quantum transport equation self-consistently with Poisson equation. FINFET is a specific case with number of sheets equal to 1. The channel materials are monolayer sheets of van der Waals (vdW) 2D semiconductors. The tool output the I-V characteristics, potential and charge profile, as well as quantum transmission and local density of states.
References
[1] L. Liu, Y. Lu, and J. Guo, "Monolayer MoS2 Field-Effect Transistors at the Scaling Limit," IEEE Trans. Electron Devices, vol. 60, p. 4133, 2013.