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FETToy
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
Launch Tool
Archive Version 1.3
Published on 26 Feb 2014
Latest version: 1.3s. All versions
doi:10.4231/D3RV0D12Z cite this
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Abstract
FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs,FETToy assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a cylindrical geometry. Only the lowest subband is considered, but it is readily modifiable to include multiple subbands.Additional related documents are:
- FETToy Detailed Description
- Theory of Ballistic Nanotransistors
- Learning Module on FETToy
- Homework Exercises for FETToy
-
Nanoscale Transistors: Device Physics, Modeling and Simulation
by Mark Lundstrom and Jing Guo (Springer - 2006) This book provides an introduction to the mathematical theory of ballistic MOSFETs and a brief discussion of the physics of scattering in nanoscale MOSFETs as well as an overview of simulation approaches to treat semiclassical and quantum transport.
Credits
The underlying theory is described in detail in A. Rahman, J. Guo, S. Datta, and M.
Lundstrom, "Theory of Ballistic Nanotransistors", IEEE Transactions on
Electron Devices, 50, pp. 1853-1864, 2003. This theory extends on
work by Natori (J. Appl. Phys., 76, 4879-4890, 1994) by including 2D
electrostatics and the so-called "quantum capacitance".
Cite this work
Researchers should cite this work as follows:
- A. Rahman, J. Guo, S. Datta, and M. Lundstrom, "Theory of Ballistic Nanotransistors", IEEE Transactions on Electron Devices, 50, pp. 1853-1864, 2003.