Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model 1.0.0

By Saurabh Vinayak Suryavanshi1, Eric Pop1

Stanford University

The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model and temperature effects for sub-10 nm 2D FETs.

Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems

Additional materials available

Version 1.0.0 - published on 14 Aug 2018 doi:10.4231/D3F18SH56 - cite this

Licensed under NEEDS Modified CMC License according to these terms

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NEEDS: New Era Electronic Devices and Systems

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