Ambipolar Virtual Source Compact Model for Graphene FETs 1.0.0
This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors (GFETs).
Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems
Additional materials available
Version 1.0.0 - published on 23 Oct 2014 doi:10.4231/D3MS3K273 - cite this
Licensed under NEEDS Modified CMC License according to these terms
Supporting Docs
- Ambipolar Virtual Source Compact Model for Graphene FETs 1.0.0 Verilog-A(VA | 8 KB)
- Ambipolar Virtual Source Compact Model for Graphene FETs 1.0.0 Benchmarks(ZIP | 3 KB)
- Ambipolar Virtual Source Compact Model for Graphene FETs 1.0.0 Model Exerciser(ZIP | 6 KB)
- Ambipolar Virtual Source Compact Model for Graphene FETs 1.0.0 Parameters(ZIP | 9 KB)
- Ambipolar Virtual Source Compact Model for Graphene FETs 1.0.0 Experimental Data(ZIP | 4 KB)
- Ambipolar Virtual Source Compact Model for Graphene FETs 1.0.0 Manual(PDF | 2 MB)
NEEDS: New Era Electronic Devices and Systems
This publication belongs to the NEEDS: New Era Electronic Devices and Systems group.