EE 3329 - Electronic Devices Syllabus

by Greg Lush

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1 = EE 3329 - Electronic Devices Syllabus ("Extended Play") =
2 === The University of Texas at El Paso ===
3 -
The following concepts can be part of the syllabus for the Electronic Devices (EE 3329) course. Note that the list of topics cannot be covered in a semester, it is up to the instructor to choose what concepts they wish to cover.
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The following concepts can be part of the syllabus for the Electronic Devices (EE 3329) course. Note that the list of topics cannot be covered in a semester, it is up to the individual instructors to choose what concepts they wish to cover.
4
5 === I. Introduction to Quantum Mechanics ===
6 * Principles of Quantum Mechanics
7 * Energy Quanta
8 * Wave-Particle Duality
9 * The Uncertainty Principle
10 -
* Schrodinger’s Wave Equation
+
* Schrödinger’s Wave Equation
11 * The Wave Equation
12 * Physical Meaning of the Wave Function
13 * Boundary Conditions
14 -
* Applications of Schrodinger’s Wave Equation
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* Applications of Schrödinger’s Wave Equation
15 * Electron in Free Space
16 * The Infinite Potential Well
17 * The Step Potential Function
18 * The Potential Barrier
19 === II. Introduction to the Quantum Theory of Solids ===
20 * Allowed and Forbidden Energy Bands
21 * Formation of Energy Bands
22 * The Kronig-Penney Model
23 * The k-Space Diagram
24 * Electrical Conduction in Solids
25 * The Energy Band and the Bond Model
26 * Drift Current
27 * Electron Effective Mass
28 * Concept of the Hole
29 * Metals, Insulators, and Semiconductors''
30 === III. Metal-Semiconductor and Semiconductor Heterojunctions ===
31 * Heterojunctions
32 * Heterojunction Materials
33 * Energy-Band Diagrams
34 * Two-Dimensional Electron Gas
35 * Equilibrium Electrostatics
36 * Current-Voltage Characteristics
37 === IV. Semiconductors: A General Introduction ===
38 * General Material Properties
39 * [SemiconductorsCompositionLesson Composition]
40 * Purity
41 * [SemiconductorsStructureLesson Structure]
42 * [CrystallineStructure Crystal Structure]
43 * The Unit Cell Concept
44 * Simple 3-D Unit Cells
45 * Semiconductor Lattices
46 * Miller Indices
47 * Crystal Growth
48 * Obtaining Ultrapure Si
49 * Single-Crystal Formation
50 * Summary
51 === V. Carrier Modeling ===
52 * Semiconductor Models
53 * [BondingModelLesson Bonding Model]
54 * [TheEnergyBandModelLesson Energy Band Model]
55 * [CarriersinSemiconductorsLesson Carriers]
56 * [TheBandGapEnergyandMaterialClassificationLesson Band Gap Energy and Material Classification]
57 * Carrier Properties
58 * Charge
59 * Effective Mass
60 * Carrier Numbers in Intrinsic Material
61 * Manipulation of Carrier Numbers – Doping
62 * Carrier-Related Terminology
63 * State and Carrier Distributions
64 * [DensityofStatesLesson Density of States]
65 * [TheFermiFunction The Fermi Function]
66 * Equilibrium Distribution of Carriers
67 * [EquilibriumCarrierConcentrationsLesson Equilibrium Carrier Concentrations]
68 * Formulas for ''n'' and ''p''
69 * Alternative Expressions for ''n'' and ''p''
70 * ''n'',,i,, and ''np'' Product
71 * Charge Neutrality Relationship
72 * Carrier Concentration Calculations
73 * Determination of E,,F,,
74 * Carrier Concentration Temperature Dependence
75 === VI. Carrier Action ===
76 * [DriftLesson Drift]
77 * Definition – Visualization
78 * [DriftCurrentLesson Drift Current]
79 * [MobilityandScatteringLesson Mobility and Scattering]
80 * Resistivity
81 * [BandBendingandPotentialKineticEnergiesLesson Band Bending]
82 * [DiffusionLesson Diffusion]
83 * Definition – Visualization
84 * Hot-Point Probe Measurement
85 * Diffusion and Total Currents[[BR]]Diffusion Currents [[BR]]Total Currents
86 * Relating Diffusion Coefficients/Mobilities[[BR]]Constancy of the Fermi Leve[[BR]]Current Flow Under Equilibrium Conditions[[BR]]Einstein Relationship
87 * [RecombinationofElectronsLesson Recombination – Generation]
88 * Definition – Visualization[[BR]]Band-to-Band Recombination[[BR]]R-G Center Recombination[[BR]]Auger Recombination[[BR]]Generation Process
89 * Equations of State
90 * [ContinuityEquationsLesson Continuity Equations]
91 * [TheOneDimensionalMinorityCarrierDiffusionEquations Minority Carrier Diffusion Equations]
92 * [SimplifyingtheMinorityCarrierDiffusionEquationsLesson Simplifications and Solutions]
93 * Problem Solving[[BR]]Sample Problem No. 1[[BR]]Sample Problem No. 2
94 * Supplemental Concepts
95 * [DiffusionLengthsLesson Diffusion Lengths]
96 * [QuasiFermiLevelsLesson Quasi-Fermi Levels]
97 === VII. ''pn'' Junction Electrostatics ===
98 * Quantitative Electrostatic Relationships
99 * Assumptions/Definitions
100 * Step Junction with V,,A,, = 0[[BR]]Solution for p[[BR]]Solution for E[[BR]]Solution for V[[BR]]Solution for x,,n,, and x,,p,,
101 * Step Junction with V,,A,, ≠ 0
102 * Examination/Extrapolation of Results
103 * Linearly Graded Junctions
104 === VIII. ''pn'' Junction Diode: I-V Characteristics ===
105 * [TheIdealDiodeEquationLesson The Ideal Diode Equation]
106 * [PNJunctionQualitativeAnalysisLesson Qualitative Derivation]
107 * Quantitative Solution Strategy[[BR]]General Considerations[[BR]]Quasineutral Regional Considerations[[BR]]Depletion Region Considerations[[BR]]Boundary Conditions[[BR]]“Game Plan” Summary
108 * Derivation from the Ideal
109 * Ideal Theory Versus Experiment
110 * Reverse-Bias Breakdown[[BR]]Avalanching[[BR]]Zener Process
111 * The R-G Current
112 * V,,A,, -> V,,bi,, High-Current Phenomena[[BR]]Series Resistance[[BR]]High-Level Injection
113 === IX. BJT Fundamentals ===
114 * Electrostatics[[BR]]
115 * Introductory Operational Considerations[[BR]]
116 * Performance Parameters
117 * Emitter Efficiency
118 * Base Transport Factor
119 * Common Base d.c. Current Gain
120 * Common Emitter d.c. Current Gain
121 === X. BJT Static Characteristics ===
122 * Ideal Transistor analysis
123 * Solution Strategy[[BR]]Basic Assumptions[[BR]]Notation[[BR]]Diffusion Equations/Boundary Conditions[[BR]]Computational Relationships
124 * General Solution (''W'' Arbitrary)[[BR]]Emitter/Collector Region Solutions[[BR]]Base Region Solution[[BR]]Performance Parameters/Terminal Currents
125 * Simplified Relationships[[BR]]Δ''p'',,B,,(x) in the Base[[BR]]Performance Parameters
126 * Ebers – Moll Equations and Model
127 * Deviations from the Ideal
128 * Ideal Theory/Experiment Comparison
129 * Base Width Modulation
130 * Punch-Through
131 * Avalanche Multiplication and Breakdown[[BR]]Common Base[[BR]]Common Emitter
132 * Geometrical effects[[BR]]Emitter Area ≠ Collector Area[[BR]]Series Resistances[[BR]]Current Crowding
133 * Recombination – Generation Current
134 * Graded Base
135 * Figure of Merit
136 === XI. MOS Fundamentals ===
137 * Ideal Structure Definition[[BR]]
138 * Electrostatics – Mostly Qualitative
139 * Visualization Aids[[BR]]Energy Band Diagram[[BR]]Block Charge Diagrams
140 * Effect of an Applied Bias[[BR]]General Observations[[BR]]Specific Biasing Regions
141 * Electrostatics – Quantitative Formulation
142 * Semiconductor Electrostatics[[BR]]Preparatory Considerations[[BR]]Delta-Depletion Solution
143 * Gate Voltage Relationship
144 * Capacitance – Voltage Characteristics
145 * Theory and Analysis[[BR]]Qualitative Theory[[BR]]Delta – Depletion Analysis
146 * Computations and Observations[[BR]]Exact Computations[[BR]]Practical Observations
147 === XII. MOSFETs – The Essentials ===
148 * Qualitative Theory of Operation[[BR]]
149 * Quantitative I,,D,, – V,,D,, Relationships
150 * Preliminary Considerations[[BR]][TheThresholdVoltageLesson Threshold Voltage][[BR]][EffectiveMobilityLesson Effective Mobility]
151 * [SquareLawTheoryLesson Square-Law Theory]
152 * [BulkChargeTheoryLesson Bulk-Charge Theory]
153 * Charge-Sheet and Exact-Charge Theories
154 === XIII. Nonideal MOS ===
155 * Metal-Semiconductor Workfunction Difference[[BR]]
156 * Oxide Charges
157 * General Information
158 * Mobile Ions
159 * The Fixed Charge
160 * Interfacial Traps
161 * Induced Charges[[BR]]Radiation Effects[[BR]]Negative-Bias Instability
162 * ΔV,,G,, Summary
163 * MOSFET Threshold Considerations
164 * V,,T,, Relationships[[BR]]
165 * Threshold, Terminology, and Technology[[BR]]
166 * Threshold Adjustment[[BR]]
167 * Back Biasing[[BR]]
168 * Threshold Summary[[BR]][[BR]]