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Resonant Tunneling Diode Simulation with NEGF

This resource has a 9.3 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Overall Period: Updated 21 Nov, 2008
Users: 48
Jobs: 892
Avg. exec. time: 4 mins
Reviews & Citations
Google/IEEE
Avg. Review: 5.0 out of 5 stars
Citations: 0

48 users, detailed statistics

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0 citations

4 questions (Ask a question)

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This tool is closed source.

Available Versions

Version 1.0.9 - published on 31 Oct, 2008
Contributor(s) Samarth Agarwal, Mathieu Luisier, Zhengping Jiang, Michael McLennan, Gerhard Klimeck
Purdue University, West Lafayette
At a glance Simulate 1D RTDs using NEGF.
Screenshots
  • Screenshot #1
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Description Simulate transport in RTDs using the Non-equilibrium Green's Function method. The simulation methodology is following the concepts of the NEMO 1-D simulation tool. The embedded single band physics is decribed in detail in the Applied Physics Letters citation listed below.

Features:

  • three different potential models:
    • linear potential drop,
    • semi-classical Thomas Fermi potential, and
    • Hartree quantum charge-selfconsistent potential.
  • relaxation in the reservoirs incorporated through a simple relaxation model.
  • automatic determination of the AlGaAs barrier height.
  • 2-barrier and multi-barrier devices.

Upgrades from previous versions:

  • Computational speed dramatically improved through computations in C rather than Matlab. Computation times for a single bias point are now down to about 1 second compared to several minutes. Matlab is notoriously bad in "for" loops, but the RGF (Recursive Green Function algorithm) cannot be vectorized in a matlab friendly fashion. So a lower-most C call was implemented that now performs the RGF for many energies in C.
  • Current density plots as a function of energy are added to the outputs. They are also augmented by a normalized running integral, which helps to identify, "where" in energy the current contributions are.
  • The adaptive grid is now set to be more selective and appears to resolve very narrow resonances much better.
  • A possible non-convergence has been avoided by setting an upper bound for the energy nodes that can be added by the adaptive grid.
Prof. Datta is providing information on the NEGF formalism and its applications in a designated Topics page with tutorials, research seminars, research publications, Ph.D. theses, and simulation tools. To understand the critical elements of the boundary conditions that treat the relaxation in the reservoirs we recommend that users read through the following publication.
  • Quantum Device Simulation with a Generalized Tunneling Formula, Gerhard Klimeck, Roger K. Lake, R. Chris Bowen, William R. Frensley and Ted Moise, Appl. Phys. Lett., Vol. 67, p.2539 (1995).
This RTD tool uses some of the concepts of the NEMO 1-D simulation tool. Unfortunately we cannot release NEMO 1-D as such on the nanoHUB and we are in the process of recreating some of its capabilities here. The first release of this nanoHUB tool has some severe limitations compared to NEMO 1-D. A more comprehensive understanding of the NEMO 1-D simulation capabilities can be gained from reading the following publications:
  • Quantitative Resonant Tunneling Diode Simulation, R. Chris Bowen, Gerhard Klimeck, Roger Lake, William R. Frensley and Ted Moise, J. of Appl. Phys., Vol. 81, 3207 (1997).
  • Single and multiband modeling of quantum electron transport through layered semiconductor devices, Roger Lake, Gerhard Klimeck, R. Chris Bowen and Dejan Jovanovic, J. of Appl. Phys., Vol. 81, 7845 (1997).

Tool Limitations:

  • single effective mass model, no sophisticated multiband models;
  • no transverse momentum integration;
  • no exchange and correlation potential;
  • GaAs / AlGaAs material system;
  • no material parameters are exposed to the users for possible changes

Known issues with this release:

  • resonances are identified only by peaks in the transmission. There is no true spatial resolution and resonances in the triangular emitter well might be identified as central device resonance.
Credits

The Graphical User Interface in this code has been copied from the first nanoHUB RTD code Resonant Tunneling Diode Simulator authored by Michael McLennan.

Sponsored by

NCN@Purdue, MSD FCRP

References
  • Quantum Device Simulation with a Generalized Tunneling Formula,
    Gerhard Klimeck, Roger K. Lake, R. Chris Bowen, William R. Frensley and Ted Moise,
    Appl. Phys. Lett., Vol. 67, p.2539 (1995).
  • Quantitative Resonant Tunneling Diode Simulation,
    R. Chris Bowen, Gerhard Klimeck, Roger Lake, William R. Frensley and Ted Moise,
    J. of Appl. Phys., Vol. 81, 3207 (1997).
  • Single and multiband modeling of quantum electron transport through layered semiconductor devices,
    Roger Lake, Gerhard Klimeck, R. Chris Bowen and Dejan Jovanovic,
    J. of Appl. Phys., Vol. 81, 7845 (1997).
Cite this work

If you reference this work in a publication, please cite as follows:

    The simulation procedure and physics are described in the the following citation:
    Quantum Device Simulation with a Generalized Tunneling Formula,
    Gerhard Klimeck, Roger K. Lake, R. Chris Bowen, William R. Frensley and Ted Moise, Appl. Phys. Lett., Vol. 67, p.2539 (1995).

  • Agarwal, Samarth; Luisier, Mathieu; Jiang, Zhengping; McLennan, Michael; Klimeck, Gerhard (2008), "Resonant Tunneling Diode Simulation with NEGF," doi: 10254/nanohub-r5237.10.

    BibTex | EndNote

In addition, we would appreciate it if you would add the following acknowledgment to your publication:

  • Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org
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  1. 5.0 out of 5 stars 

    Posted on 06 September, 2008 by Anonymous

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