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Resonant Tunneling Diode Simulator

This resource has a 9.9 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Overall Period: Updated 19 Jul, 2008
Users: 777
Jobs: 24211
Avg. exec. time: 5 secs
Reviews & Citations
Google/IEEE: updated 24 Apr, 2008
Avg. Review: 5.0 out of 5 stars
Citations: 3

777 users, detailed statistics

2 reviews (Review this)

3 citations

0 questions (Ask a question)

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Available Versions

Version 1.1 - published on 05 Dec, 2007
Contributor(s) Michael McLennan
Purdue University, West Lafayette
At a glance Simulate 1D resonant tunneling devices and other heterostructures via ballistic quantum transport.
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  • Screenshot #1
Description

Heterostructure devices have thin layers of alternating materials. Some layers act as barriers to electron flow, but if the layers are thin enough, electrons can "tunnel" through them. If two or more barriers are placed closely together, electrons can reflect between the barriers and resonate at particular energies, allowing complete transmission through the barriers, as if they were not there! This gives rise to negative differential resistance--current that goes down as voltage goes up--an interesting behavior that can be harnessed to form new devices.

Use this tool to explore the effects of tunneling through one or more material layers. Change the doping density, material properties, and layer thicknesses, and examine transmission coefficients and current-voltage relationships.

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SEQUAL 2.1 is a device simulation program that computes Semiconductor Electrostatics by Quantum Analysis. Given a device, SEQUAL will compute the electron density and the current density using a quantum mechanical, collisionless description of electron propagation. SEQUAL is based on the formulation of M. Cahay, M. McLennan, S. Datta, and M. S. Lundstrom, "Importance of Space-Charge Effects in Resonant Tunneling Devices," Applied Physics Letters, vol. 50 (10), pp. 612-614, 1987.

Cite this work

If you reference this work in a publication, please cite as follows:

  • McLennan, Michael (2005), "Resonant Tunneling Diode Simulator," doi: 10254/nanohub-r230.2.

    BibTex | EndNote

In addition, we would appreciate it if you would add the following acknowledgment to your publication:

  • Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org

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  1. 5.0 out of 5 stars 

    Posted on 18 April, 2007 by H.-S. Philip Wong

    Last year, we used the RTD tool on the nanohub for our Nanoelectronics class. I assigned a mid-term exam based on the RTD analysis and one of the students took it further and wrote a paper on the subject (nanoHUB is referenced prominently in the paper). It can be one of the many success stories of the nanoHUB one can tell the NSF about.

    Thank you for your help on the RTD tool.

    H.-S. Philip Wong
    Center for Integrated Systems,
    Stanford University, Stanford,

  2. 5.0 out of 5 stars 

    Posted on 19 October, 2005 by Anonymous

    Very nice educational tool

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