Using PETE one can evaluate any MOSFET like devices or any New Devices in terms of performance on Benchmark circuits. The input to the tool can be in terms of typical MOSFET parameters or in terms of I-V and C-V tables. The Benchmark circuits include minimum sized inverter, nand chain, norchain, 8-bit Full Adder, Ring Oscillator and Cascaded inverters driving a big load capacitance. Further, one can perform DC simulations on inverters and obtain voltage transfer characteristics (VTCs) and noise margin/ gain from the VTC.

Thanks to the following people for their contributions to this work:

We would also like to acknowledge our helpful discussions with Jaydeep Kulkarni and Qikai Chen.

This work was funded by the Nanoelectronics Research Initiative (NRI) and Intel Corporation.

Nanoelectronics Research Initiative and Intel Corp.

If you reference this work in a publication, please cite as follows:

• Raychowdhury, Arijit; Augustine, Charles; Gao, Yunfei; Lundstrom, Mark (2007), "PETE : Purdue Emerging Technology Evaluator," doi: 10254/nanohub-r2841.3.

  BibTex | EndNote

In addition, we would appreciate it if you would add the following acknowledgment to your publication:

• Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org

1. benchmarking
2. characterization
3. circuits
4. MOSFET
5. nanoelectronics
6. performance
7. power
8. system performance