For each electrical bias, PADRE solves a coupled set of partial differential equations (PDEs). A variety of PDE systems are supported which form a hierarchy of accuracy:

• electrostatic (Poisson equation)
• drift-diffusion (including carrier continuity equations)
• energy balance (including carrier temperature)
• electrothermal (including lattice heating)

A variety of supplemental documents are available that deal with the PADRE software and TCAD simulation:

• User Guide (HTML)
• Abbreviated First Time User Guide
• FAQ
• A set of course notes on Computational Electronics with detailed explanations on bandstructure, pseudopotentials, numerical issues, and drift diffusion.
• Introduction to DD Modeling with PADRE
• MOS Capacitors: Description and Semiclassical Simulation With PADRE
• A Primer on Semiconductor Device Simulation (Seminar)

PADRE was developed at Bell Labs by Mark Pinto, R. Kent Smith, and Ashraful Alam.

If you reference this work in a publication, please cite as follows:

• (2006), "Padre," doi: 10254/nanohub-r941.3.

  BibTex | EndNote

In addition, we would appreciate it if you would add the following acknowledgment to your publication:

• Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org

1. abacus
2. ACUTE
3. microelectronics
4. nano-transistors
5. nanoelectronics
6. semiconductor
7. transport/Boltzmann
8. transport/Drift-Diffusion