Sending report ...NCN Nanoelectronics: Simulation Tools for Research
nanoMOS
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 367 Jobs: 2636 Avg. exec. time: 22 mins Reviews & Citations Google/IEEE: updated 25 Apr, 2008 Avg. Review: Citations: 42
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| Contributor(s) | Zhibin Ren, Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Mark Lundstrom Purdue University, West Lafayette |
|---|---|
| At a glance | 2D simulator for thin body MOSFETs, with transport models ranging from drift-diffusion to quantum diffusive. |
| Screenshots | |
| Description | NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the confinement direction exactly and the names indicate the technique used to account for carrier transport along the channel. Each of these transport models is solved self-consistently with Poisson's equation. Several internal quantities such as subband profiles, subband areal electron densities, potential profiles and I-V information can be obtained from the source code. NanoMOS 3.0 includes an improved treatment of carrier scattering. (Errors in self energy and the LDOS plot were also corrected.)
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| Credits | nanoMOS 1.0 was written in Matlab and developed by Zhibin Ren as part of his doctoral work at Purdue University. The development of NanoMOS was supported by the Semiconductor Research Corporation and by the Army Research Office through a Defense University Research Initiative on Nanotechnology grant. |
| Cite this work | If you reference this work in a publication, please cite as follows:
In addition, we would appreciate it if you would add the following acknowledgment to your publication:
|
| Version released | 09 May, 2008 |
| Type | Tools |
| Tags |
Citations
The following are publications that have cited this resource, separated by their affiliation to the NCN.
Non-affiliated authors
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Ray, B.; Shubhakar; Mahapatra, S. (2007), "Necessity for Quantum MEchanical Simulation for the Future Technology Nodes", Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on: pg. 880-883, December. 978-1-4244-1728-5. (DOI: 10.1109/IWPSD.2007.4472662).
-
Khan, A.I.; Ashraf, Md. K.; Haque, A. (2007), "Influence of Wave Function Penetration on Short Channel Effects in Nanoscae Double Gate MOSFETs", Electron Devices and Solid-State Circuits, 2007. EDSSC 2007, IEE Eonference on: pg. 109-112, December. 978-1-4244-0637-1.
-
Rafhay, Q.; Clerc, R.; Ghibaudo, G.; Pananakakis, G. (2007), "Impact of source to drain tunneling on the lon/loff trade-off of alternative channel material MOSFETs", Semiconductor Device Research Symposium, 2007 International: pg. 1-2, December. 978-4244-1892-3.
-
Balasubramanian, S. (2006), "Nanoscale thin-body MOSFET design and applications" (PhD Thesis), University of California at Berkeley, October.
-
Ahmadain, A.A.; Roenker, K.P.; Tomko, K.A. (2006), "A Study of the Performance of Ballistic Nanoscale MOSFETS Using Classical and Quantum Ballistic Transport Models", Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on, 1: pg. 16-19, 17-20 June. 1-4244-0077-5.
-
Klös, A. (2006), "Nanotechnologie in der Elektronik: Ein Ausblick auf die Bauelemente der Zukunft", Technologie 2006, Wetzlar.
-
Xia, T. (2005), "Simulation Study of Deep Sub-Micron and Nanoscale Semiconductor Transistors" (PhD Thesis), University of Texas at Austin, May.
-
Zhao, M.; Chadha, V.; Figueiredo, R.J. (2005), "Supporting application-tailored grid file system sessions with WSRF-based services", High Performance Distributed Computing, 2005. HPDC-14. Proceedings. 14th IEEE International Symposium on: pg. 24--33, 24-27 July.
-
Ahmed, S.S.; Ringhofer, C.; Vasileska, D. (2005), "Efficacy of the Thermalized Effective Potential Approach for Modeling Nano-Devices", Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on: pg. 251--254, 1-3 September.
-
Xiong, S.; Bokor, J. (2005), "Structural optimization of SUTBDG devices for low-power applications", Electron Devices, IEEE Transactions on, 52, 312: pg. 360--366, March.
-
Iwata, H.; Matsuda, T.; Ohzone, T. (2005), "Influence of image and exchange-correlation effects on electron transport in nanoscale DG MOSFETs", Electron Devices, IEEE Transactions on, 52, 7: pg. 1596--1602, July.
-
Akturk, A.; Goldsman, N.; Metze, G. (2005), "Self-consistent modeling of heating and MOSFET performance in 3-D integrated circuits", Electron Devices, IEEE Transactions on, 52, 11: pg. 2395--2403, November.
-
Hamid, H.A.; Iniguez, B.; Jimenez, D.; Marsal, L.F.; Pallares, J. (2005), "Double gate MOSFET compact model including scattering", Electron Devices, 2005 Spanish Conference on, 413, 2-4 February.
-
Fonseca, J.; Kaya, S. (2004), "Simulation of interface roughness in DG-MOSFETs using non-equilibrium Green's functions", Device Research Conference, 2004. 62nd DRC. Conference Digest, 1: pg. 65--66, 21-23 June.
-
Laux, S.E. (2004), "Arbitrary crystallographic orientation in QDAME with Ge 7.5 nm DGFET examples", Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on: pg. 76--77.
-
Graham, P.; Gokhale, M. (2004), "Nanocomputing in the presence of defects and faults: a survey", Nano, quantum and molecular computing: implications to high level design and validation, Kluwer Academic Publishers, Norwell, MA.
-
Fonseca, J.; Kaya, S. (2004), "Accurate treatment of interface roughness in nanoscale DG MOSFETs using non-equilibrium Green's functions", Solid-State Electronics, 48, 10-11: pg. 1843-1847, October-November. (DOI: 10.1016/j.sse.2004.05.024).
-
Low, T.; Hou, Y.T.; Li, M.F.; Zhu, C.; Chin, A.; Samudra, G.; Chan, L.; Kwong, D.-L. (2003), "Investigation of performance limits of germanium double-gated MOSFETs", Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International: pg. 2941--2944, 8-10 December.
-
Xia, T.; Register, L.F.; Banerjee, S.K. (2003), "Quantum transport in double-gate MOSFETs with complex band structure", Electron Devices, IEEE Transactions on, 50, 6: pg. 1511--1516, June.
-
Jimenez, D.; Saenz, J.J.; Iniguez, B.; Sune, J.; Marsal, L.F.; Pallares, J. (2003), "Compact modeling of nanoscale MOSFETs in the ballistic limit", European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on: pg. 187--190, 16-18 September.
-
Balasubramanian, S.; Chang, L.; Nikolic, B.; King, T.-J. (2003), "Circuit-Performance Implications for Double-Gate MOSFET Scaling Below 25nm", 2003 Silicon Nanoelectronics Workshop, June.
-
Xia, T.; Register, L.F.; Banerjee, S.K. (2003), "Quantum transport in double-gate MOSFETs with complex band structure", Electron Devices, IEEE Transactions on, 50, 6: pg. 1511-1516, June. 1557-9646. (DOI: 10.1109/TED.2003.813348).
-
Fonseca, J.; Kaya, S. (2003), "Simulation of interface roughness in DG-MOSFETs using non-equilibrium Green's functions", Semiconductor Device Research Symposium, 2003 International: pg. 512--513, 10-12 December.
Affiliated authors
-
Cantley, K. D.; Liu, Y.; Pal, H. S.; Low, T.; Ahmed, S. S.; Lundstrom, M. S. (2007), "Performance Analysis of III-V Materials in a Double-Gate nano-MOSFET", Electron Devices Meeting, 2007, IEDM 2007, IEEE International: pg. 113-116, December. 978-1-4244-1508-3.
-
Ahmed, S.; Klimeck, G.; Kearney, D.; McLennan, M.; Anantram, M.P. (2007), "Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org", International Journal of High Speed Electronics and Systems, 17, 3: pg. 485-494, September.
-
Lundstrom, M.; Klimeck, G. (2006), "The NCN: Science, Simulation, and Cyber Services", Emerging Technologies - Nanoelectronics, 2006 IEEE Conference on: pg. 496--500, 10-13 January.
-
Ananthan, H.; Roy, K. (2006), "A Compact Physical Model for Yield Under Gate Length and Body Thickness Variations in Nanoscale Double-Gate CMOS", Electron Devices, IEEE Transactions on, 53, 9: pg. 2151-2159, September.
-
Zhao, M.; Figueiredo, R.J. (2006), "Application-Tailored Cache Consistency for Wide-Area File Systems", Distributed Computing Systems, 2006. ICDCS 2006. 26th IEEE International Conference on: pg. 41, 4-7 July.
-
Rahman, A.; Klimeck, G.; Lundstrom, M. (2005), "Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects", Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International: pg. 4, 5-7 December.
-
Fortes, A.B.; Figueiredo, J.; Lundstrom, M.S. (2005), "Virtual computing infrastructures for nanoelectronics simulation", Proceedings of the IEEE, 93, 10: pg. 1839--1847, October.
-
Rahman, A.; Lundstrom, M.S.; Ghosh, A.W. (2005), "Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers", Journal of Applied Physics, 97, 053702.
-
Ravishankar, R.; Kathawala, G.; Ravaioli, U.; Hasan, S.; Lundstrom, M. (2004), "Comparison of Monte Carlo and NEGF simulations of double gate MOSFETs", Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on: pg. 95--96.
-
Wang, J.; Polizzi, E.; Lundstrom, M. (2003), "A computational study of ballistic silicon nanowire transistors", Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International: pg. 29.5.1-29.5.4, 8-10 December. 0-7803-7872-5. (DOI: 10.1109/IEDM.2003.1269375).
-
Rahman, A.; Ghosh, A.; Lundstrom, M. (2003), "Assessment of Ge n-MOSFETs by quantum simulation", Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International: pg. 1941--1944, 8-10 December.
-
Goasguen, S.; Venugopal, R.; Lundstrom, M.S. (2003), "Modeling transport in nanoscale silicon and molecular devices on parallel machines", Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on, 1: pg. 398--401, 12-14 August.
-
Rahman, A.; Guo, J.; Datta, S.; Lundstrom, M.S. (2003), "Theory of ballistic nanotransistors", Electron Devices, IEEE Transactions on, 50, 9: pg. 1853--1864, September.
-
Ren, Z.; Venugopal, R.; Goasguen, S.; Datta, S.; Lundstrom, M.S. (2003), "nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs", IEEE Transactions on Electron Devices, 50, 9: pg. 1914--1925, September.
-
Lundstrom, M. (2003), "Device physics at the scaling limit: what matters? [MOSFETs]", Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International: pg. 3311--3314, 8-10 December.
-
Lundstrom, M.; Ren, Z. (2002), "Essential physics of carrier transport in nanoscale MOSFETs", Electron Devices, IEEE Transactions on, 49, 10: pg. 133--141, January.
-
Parikh, C.D.; Lundstrom, M.S. (2002), "Electron transport in nanoscale bipolar transistors", 2002 2nd IEEE Conference on Nanotechnology.
-
Goasguen, S.; Butt, A.R.; Colby, K.D.; Lundstrorn, M.S. (2002), "Parallelization of the nanoscale device simulator nanoMOS-2.0 using a 100 nodes linux cluster", Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on: pg. 409--412, 26-28 August.
-
Ren, Z.; Venugopal, R.; Datta, S.; Lundstrom, M. (2001), "Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green's function simulation", Electron Devices Meeting, 2001. IEDM Technical Digest. International: pg. 541--544, 2-5 December.
Ray, B.; Shubhakar; Mahapatra, S. (2007), "Necessity for Quantum MEchanical Simulation for the Future Technology Nodes", Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on: pg. 880-883, December. 978-1-4244-1728-5. (DOI: 10.1109/IWPSD.2007.4472662).
Khan, A.I.; Ashraf, Md. K.; Haque, A. (2007), "Influence of Wave Function Penetration on Short Channel Effects in Nanoscae Double Gate MOSFETs", Electron Devices and Solid-State Circuits, 2007. EDSSC 2007, IEE Eonference on: pg. 109-112, December. 978-1-4244-0637-1.
Rafhay, Q.; Clerc, R.; Ghibaudo, G.; Pananakakis, G. (2007), "Impact of source to drain tunneling on the lon/loff trade-off of alternative channel material MOSFETs", Semiconductor Device Research Symposium, 2007 International: pg. 1-2, December. 978-4244-1892-3.
Balasubramanian, S. (2006), "Nanoscale thin-body MOSFET design and applications" (PhD Thesis), University of California at Berkeley, October.
Ahmadain, A.A.; Roenker, K.P.; Tomko, K.A. (2006), "A Study of the Performance of Ballistic Nanoscale MOSFETS Using Classical and Quantum Ballistic Transport Models", Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on, 1: pg. 16-19, 17-20 June. 1-4244-0077-5.
Klös, A. (2006), "Nanotechnologie in der Elektronik: Ein Ausblick auf die Bauelemente der Zukunft", Technologie 2006, Wetzlar.
Xia, T. (2005), "Simulation Study of Deep Sub-Micron and Nanoscale Semiconductor Transistors" (PhD Thesis), University of Texas at Austin, May.
Zhao, M.; Chadha, V.; Figueiredo, R.J. (2005), "Supporting application-tailored grid file system sessions with WSRF-based services", High Performance Distributed Computing, 2005. HPDC-14. Proceedings. 14th IEEE International Symposium on: pg. 24--33, 24-27 July.
Ahmed, S.S.; Ringhofer, C.; Vasileska, D. (2005), "Efficacy of the Thermalized Effective Potential Approach for Modeling Nano-Devices", Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on: pg. 251--254, 1-3 September.
Xiong, S.; Bokor, J. (2005), "Structural optimization of SUTBDG devices for low-power applications", Electron Devices, IEEE Transactions on, 52, 312: pg. 360--366, March.
Iwata, H.; Matsuda, T.; Ohzone, T. (2005), "Influence of image and exchange-correlation effects on electron transport in nanoscale DG MOSFETs", Electron Devices, IEEE Transactions on, 52, 7: pg. 1596--1602, July.
Akturk, A.; Goldsman, N.; Metze, G. (2005), "Self-consistent modeling of heating and MOSFET performance in 3-D integrated circuits", Electron Devices, IEEE Transactions on, 52, 11: pg. 2395--2403, November.
Hamid, H.A.; Iniguez, B.; Jimenez, D.; Marsal, L.F.; Pallares, J. (2005), "Double gate MOSFET compact model including scattering", Electron Devices, 2005 Spanish Conference on, 413, 2-4 February.
Fonseca, J.; Kaya, S. (2004), "Simulation of interface roughness in DG-MOSFETs using non-equilibrium Green's functions", Device Research Conference, 2004. 62nd DRC. Conference Digest, 1: pg. 65--66, 21-23 June.
Laux, S.E. (2004), "Arbitrary crystallographic orientation in QDAME with Ge 7.5 nm DGFET examples", Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on: pg. 76--77.
Graham, P.; Gokhale, M. (2004), "Nanocomputing in the presence of defects and faults: a survey", Nano, quantum and molecular computing: implications to high level design and validation, Kluwer Academic Publishers, Norwell, MA.
Fonseca, J.; Kaya, S. (2004), "Accurate treatment of interface roughness in nanoscale DG MOSFETs using non-equilibrium Green's functions", Solid-State Electronics, 48, 10-11: pg. 1843-1847, October-November. (DOI: 10.1016/j.sse.2004.05.024).
Low, T.; Hou, Y.T.; Li, M.F.; Zhu, C.; Chin, A.; Samudra, G.; Chan, L.; Kwong, D.-L. (2003), "Investigation of performance limits of germanium double-gated MOSFETs", Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International: pg. 2941--2944, 8-10 December.
Xia, T.; Register, L.F.; Banerjee, S.K. (2003), "Quantum transport in double-gate MOSFETs with complex band structure", Electron Devices, IEEE Transactions on, 50, 6: pg. 1511--1516, June.
Jimenez, D.; Saenz, J.J.; Iniguez, B.; Sune, J.; Marsal, L.F.; Pallares, J. (2003), "Compact modeling of nanoscale MOSFETs in the ballistic limit", European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on: pg. 187--190, 16-18 September.
Balasubramanian, S.; Chang, L.; Nikolic, B.; King, T.-J. (2003), "Circuit-Performance Implications for Double-Gate MOSFET Scaling Below 25nm", 2003 Silicon Nanoelectronics Workshop, June.
Xia, T.; Register, L.F.; Banerjee, S.K. (2003), "Quantum transport in double-gate MOSFETs with complex band structure", Electron Devices, IEEE Transactions on, 50, 6: pg. 1511-1516, June. 1557-9646. (DOI: 10.1109/TED.2003.813348).
Fonseca, J.; Kaya, S. (2003), "Simulation of interface roughness in DG-MOSFETs using non-equilibrium Green's functions", Semiconductor Device Research Symposium, 2003 International: pg. 512--513, 10-12 December.
Affiliated authors
-
Cantley, K. D.; Liu, Y.; Pal, H. S.; Low, T.; Ahmed, S. S.; Lundstrom, M. S. (2007), "Performance Analysis of III-V Materials in a Double-Gate nano-MOSFET", Electron Devices Meeting, 2007, IEDM 2007, IEEE International: pg. 113-116, December. 978-1-4244-1508-3.
-
Ahmed, S.; Klimeck, G.; Kearney, D.; McLennan, M.; Anantram, M.P. (2007), "Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org", International Journal of High Speed Electronics and Systems, 17, 3: pg. 485-494, September.
-
Lundstrom, M.; Klimeck, G. (2006), "The NCN: Science, Simulation, and Cyber Services", Emerging Technologies - Nanoelectronics, 2006 IEEE Conference on: pg. 496--500, 10-13 January.
-
Ananthan, H.; Roy, K. (2006), "A Compact Physical Model for Yield Under Gate Length and Body Thickness Variations in Nanoscale Double-Gate CMOS", Electron Devices, IEEE Transactions on, 53, 9: pg. 2151-2159, September.
-
Zhao, M.; Figueiredo, R.J. (2006), "Application-Tailored Cache Consistency for Wide-Area File Systems", Distributed Computing Systems, 2006. ICDCS 2006. 26th IEEE International Conference on: pg. 41, 4-7 July.
-
Rahman, A.; Klimeck, G.; Lundstrom, M. (2005), "Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects", Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International: pg. 4, 5-7 December.
-
Fortes, A.B.; Figueiredo, J.; Lundstrom, M.S. (2005), "Virtual computing infrastructures for nanoelectronics simulation", Proceedings of the IEEE, 93, 10: pg. 1839--1847, October.
-
Rahman, A.; Lundstrom, M.S.; Ghosh, A.W. (2005), "Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers", Journal of Applied Physics, 97, 053702.
-
Ravishankar, R.; Kathawala, G.; Ravaioli, U.; Hasan, S.; Lundstrom, M. (2004), "Comparison of Monte Carlo and NEGF simulations of double gate MOSFETs", Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on: pg. 95--96.
-
Wang, J.; Polizzi, E.; Lundstrom, M. (2003), "A computational study of ballistic silicon nanowire transistors", Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International: pg. 29.5.1-29.5.4, 8-10 December. 0-7803-7872-5. (DOI: 10.1109/IEDM.2003.1269375).
-
Rahman, A.; Ghosh, A.; Lundstrom, M. (2003), "Assessment of Ge n-MOSFETs by quantum simulation", Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International: pg. 1941--1944, 8-10 December.
-
Goasguen, S.; Venugopal, R.; Lundstrom, M.S. (2003), "Modeling transport in nanoscale silicon and molecular devices on parallel machines", Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on, 1: pg. 398--401, 12-14 August.
-
Rahman, A.; Guo, J.; Datta, S.; Lundstrom, M.S. (2003), "Theory of ballistic nanotransistors", Electron Devices, IEEE Transactions on, 50, 9: pg. 1853--1864, September.
-
Ren, Z.; Venugopal, R.; Goasguen, S.; Datta, S.; Lundstrom, M.S. (2003), "nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs", IEEE Transactions on Electron Devices, 50, 9: pg. 1914--1925, September.
-
Lundstrom, M. (2003), "Device physics at the scaling limit: what matters? [MOSFETs]", Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International: pg. 3311--3314, 8-10 December.
-
Lundstrom, M.; Ren, Z. (2002), "Essential physics of carrier transport in nanoscale MOSFETs", Electron Devices, IEEE Transactions on, 49, 10: pg. 133--141, January.
-
Parikh, C.D.; Lundstrom, M.S. (2002), "Electron transport in nanoscale bipolar transistors", 2002 2nd IEEE Conference on Nanotechnology.
-
Goasguen, S.; Butt, A.R.; Colby, K.D.; Lundstrorn, M.S. (2002), "Parallelization of the nanoscale device simulator nanoMOS-2.0 using a 100 nodes linux cluster", Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on: pg. 409--412, 26-28 August.
-
Ren, Z.; Venugopal, R.; Datta, S.; Lundstrom, M. (2001), "Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green's function simulation", Electron Devices Meeting, 2001. IEDM Technical Digest. International: pg. 541--544, 2-5 December.
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