Sending report ...NCN Nanoelectronics: Simulation Tools for Education
MOSFet
- This resource has a 7.5 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Overall Period: Updated 21 Aug, 2008 Users: 1668 Jobs: 18637 Avg. exec. time: 5 mins Reviews & Citations Google/IEEE: updated 22 Apr, 2008 Avg. Review: Citations: 2
1668 users, detailed statistics
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This tool is closed source.
Available Versions
- 1.1 (published)
- 1.0 (unpublished)
| Version | 1.1 - published on 11 Feb, 2008 |
|---|---|
| Contributor(s) | Matteo Mannino, Shaikh S. Ahmed, Gerhard Klimeck Purdue University, West Lafayette Dragica Vasileska Arizona State University Xufeng Wang, Himadri Pal Purdue University, West Lafayette |
| At a glance | Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) |
| Screenshots | |
| Description | Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles. MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs. |
| Powered by | PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs. |
| Cite this work | If you reference this work in a publication, please cite as follows:
In addition, we would appreciate it if you would add the following acknowledgment to your publication:
|
| Type | Tools |
| Tags |
Citations
The following are publications that have cited this resource, separated by their affiliation to the NCN.
Non-affiliated authors
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Myers-Riggs, R.R.; Roenker, K.P. (2005), "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport" (Master's Thesis), University of Cincinnati.
Affiliated authors
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Klimeck, G. (2007), "NanoHUB.org Tutorial: Education Simulation Tools," Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on: pg. nil41-nil41, 01. 1-4244-0610-2. (DOI: 10.1109/NEMS.2007.351992).
Myers-Riggs, R.R.; Roenker, K.P. (2005), "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport" (Master's Thesis), University of Cincinnati.
Affiliated authors
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Klimeck, G. (2007), "NanoHUB.org Tutorial: Education Simulation Tools," Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on: pg. nil41-nil41, 01. 1-4244-0610-2. (DOI: 10.1109/NEMS.2007.351992).
Reviews
The following are reviews of this resource from other site members.
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Posted on 19 April, 2008 by Anonymous
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Posted on 09 April, 2008 by Haydar MAHMOUD
this simulator is not used for real MOSFET designing, because it lacks the dynamic property implemented by BTE and it doesn't take into account the QM effects.
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Posted on 09 April, 2008 by Haydar MAHMOUD
this simulator is not used for real MOSFET designing, because it lacks the the dynamic simulation implemented by BTE and doesn't take into account the QM effects.
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Posted on 12 October, 2006 by Anonymous
A comprehensive device simulator
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Posted on 30 November, 2005 by reza
See also
The following are resources that may cover similar or related topics.
- 9.1 Ranking Topic Introduction to Semiconductor Devices with ABACUS
- 0.0 Ranking Topic ACUTE Assembly for Computational Electronics
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0.0 Ranking Series
Part of: NCN Nanoelectronics: Simulation Tools for Education
NCN Nanoelectronics: Simulation Tools for Education
Many simulation tools are available on the nanoHUB. The tools have been well-tested and here include supporting materials so that they can be effectively used for education or intelligently used for research. The educational tools include example a first time users guide and example homework …
Related Questions & Answers
The following are questions related to this tool that were posted by other users in our questions and answers forum.
- Short channel modeling using this tool? - 0 responses
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