The primary reason to study the Metal-Oxide-Silicon (MOS) capacitor is to understand the principle of operation as well as the detailed analysis of the Metal-Oxide-Silicon Field Effect Transistor(MOSFET).

MOSCap simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual -gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature, doping concentration and applied frequency. Among the quantities simulated, the low and high -frequency capacitance-voltage (CV) characteristics and various spatial profiles (energy band, vertical electric field, charge densities etc.) are of special importance.

To better understand the operation of a MOS Capacitor, we provide brief tutorials and some typical exercises that will help in understanding the operation of MOS Capacitors from a semiclassical viewpoint. If one is interested on the Quantum-Mechanical description of the charge in the channel in MOS Capacitors please use the SCHRED tool.

MOSCap is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.

If you reference this work in a publication, please cite as follows:

• Matsudaira, Akira; Ahmed, Shaikh S.; Klimeck, Gerhard; Vasileska, Dragica (2006), "MOSCap," doi: 10254/nanohub-r451.3.

  BibTex | EndNote

In addition, we would appreciate it if you would add the following acknowledgment to your publication:

• Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org

1. microelectronics
2. MOS
3. nano-transistors
4. nanoelectronics
5. semiconductor