Sending report ...NCN Nanoelectronics: Simulation Tools for Education
FETToy
- This resource has a 9.5 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 482 Jobs: 5907 Avg. exec. time: 5 secs Reviews & Citations Google/IEEE: updated 28 Apr, 2008 Avg. Review: Citations: 11
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| Contributor(s) | Anisur Rahman, Jing Wang Purdue University, West Lafayette Jing Guo University of Florida Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom Purdue University, West Lafayette |
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| At a glance | Toy model to simulate I-V characteristics of nanoscale double gate MOSFETs |
| Screenshots | |
| Description | FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs,
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| Credits | The underlying theory is described in detail in A. Rahman, J. Guo, S. Datta, and M. |
| Cite this work | If you reference this work in a publication, please cite as follows:
In addition, we would appreciate it if you would add the following acknowledgment to your publication:
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| Version released | 09 Jan, 2008 |
| Type | Tools |
| Tags |
Citations
The following are publications that have cited this resource, separated by their affiliation to the NCN.
Non-affiliated authors
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Kazmierski, T.; Zhou, D.; Al-Hashimi, B. (2008), "Efficient Circuit-Level Modeling of balistic CNT using Piecewise Non-Linear Approximation of Mobile Charge Density".
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Pregaldiny, F.; Lallement, C.; Diange, B.; Sallese, M.; Krummenacher, F. (2007), "Compact Modeling of Emerging Technologies with VHDL-AMS", Advances in Design and Specification Languages for Embedded Systems, Springer Netherlands: pg. 5-21. 978-1-4020-6147-9. (DOI: 10.1007/978-1-4020-6149-3_1).
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Hoffa, J. (2007), "Simulation of Carbon Nanotube Based Field Effect Transistors" (Master's Thesis), University of Cincinnati.
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Kazmierski, T.; Zhou, D.; Al-Hashimi, B. (2007), "A fast, numerical circuit-level model of carbon nanotube transistor", Nanoscale Architechtures, 2007, NANOSARCH 2007, IEEE International Symposium on: pg. 33-37, October. 978-1-4244-1791-9. (DOI: 10.1109/NANOARCH.2007.4400855).
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Khan, A.; Shah, A.Q.S.; Guo, J. (2007), "Modeling and Simulation of n-Type Carbon Nanotube Field Effect Transistors Using Ca as Contact Electrodes", Mater. Res. Soc. Symp. Proc., 1018.
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O'Conner, I; Liu, J.; Gaffiot, F.; Pregaldiny, F.; Lallement, C.; Maneux, C.; Goguet, J.; Fregonese, S.; Zimmer, T.; Anghel, L.; Dang, T.-T.; Leveugle, R (2007), "CNTFET Modeling and Reconfigurable Logic-Circuit Design", Circuits and Systems I: Regular Papers, IEEE Transactions on [Circuits and Systems : Fundamental Theory and Applications, IEEE Transactions on], 54, 11: pg. 2365-2379, November.
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Hashempour, H.; Lombardi, F. (2006), "An Efficient and Symbolic Model for Charge Densities in Ballistic Carbon Nanotube FETs", Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on, 1: pg. 23-26, 17-20 June. 1-4244-0077-5.
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Kammerer, J.-B.; Lallement, C.; Pregaldiny, F. (2006), "Design-oriented Compact Models for CNTFETs", Design and Test of Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on: pg. 34--39.
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Myers-Riggs, R.R. (2005), "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport" (Master's Thesis), University of Cincinnati.
Affiliated authors
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Wang, J. (2005), "Device Physics and Simulation of Silicon Nanowire Transistors" (PhD Thesis), Purdue University, August.
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Wang, J.; Lundstrom, M. (2005), "Channel Material Optimization for the Ultimate Planar and Nanowire MOSFETs: A Theoretical Exploration", Device Research Conference, 2005. 63rd DRC. Conference Digest, 1: pg. 241--242, 20-22 June.
Kazmierski, T.; Zhou, D.; Al-Hashimi, B. (2008), "Efficient Circuit-Level Modeling of balistic CNT using Piecewise Non-Linear Approximation of Mobile Charge Density".
Pregaldiny, F.; Lallement, C.; Diange, B.; Sallese, M.; Krummenacher, F. (2007), "Compact Modeling of Emerging Technologies with VHDL-AMS", Advances in Design and Specification Languages for Embedded Systems, Springer Netherlands: pg. 5-21. 978-1-4020-6147-9. (DOI: 10.1007/978-1-4020-6149-3_1).
Hoffa, J. (2007), "Simulation of Carbon Nanotube Based Field Effect Transistors" (Master's Thesis), University of Cincinnati.
Kazmierski, T.; Zhou, D.; Al-Hashimi, B. (2007), "A fast, numerical circuit-level model of carbon nanotube transistor", Nanoscale Architechtures, 2007, NANOSARCH 2007, IEEE International Symposium on: pg. 33-37, October. 978-1-4244-1791-9. (DOI: 10.1109/NANOARCH.2007.4400855).
Khan, A.; Shah, A.Q.S.; Guo, J. (2007), "Modeling and Simulation of n-Type Carbon Nanotube Field Effect Transistors Using Ca as Contact Electrodes", Mater. Res. Soc. Symp. Proc., 1018.
O'Conner, I; Liu, J.; Gaffiot, F.; Pregaldiny, F.; Lallement, C.; Maneux, C.; Goguet, J.; Fregonese, S.; Zimmer, T.; Anghel, L.; Dang, T.-T.; Leveugle, R (2007), "CNTFET Modeling and Reconfigurable Logic-Circuit Design", Circuits and Systems I: Regular Papers, IEEE Transactions on [Circuits and Systems : Fundamental Theory and Applications, IEEE Transactions on], 54, 11: pg. 2365-2379, November.
Hashempour, H.; Lombardi, F. (2006), "An Efficient and Symbolic Model for Charge Densities in Ballistic Carbon Nanotube FETs", Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on, 1: pg. 23-26, 17-20 June. 1-4244-0077-5.
Kammerer, J.-B.; Lallement, C.; Pregaldiny, F. (2006), "Design-oriented Compact Models for CNTFETs", Design and Test of Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on: pg. 34--39.
Myers-Riggs, R.R. (2005), "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport" (Master's Thesis), University of Cincinnati.
Affiliated authors
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Wang, J. (2005), "Device Physics and Simulation of Silicon Nanowire Transistors" (PhD Thesis), Purdue University, August.
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Wang, J.; Lundstrom, M. (2005), "Channel Material Optimization for the Ultimate Planar and Nanowire MOSFETs: A Theoretical Exploration", Device Research Conference, 2005. 63rd DRC. Conference Digest, 1: pg. 241--242, 20-22 June.
Reviews
The following are reviews of this resource from other site members.
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Posted on 17 April, 2008 by RAVI CHARAN
I`m an undergraduate student...
I liked this tool ,this is very much useful to me..
thanks a lot..............
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Posted on 14 June, 2007 by Thuy
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Posted on 12 October, 2006 by Hamidreza Hashempour
Seems to me that Source/Drain/Gate control parameters (alpha) have incorrect default values for the cntfet module of this tool.
Since these parameters are the ratio of source/drain/gate capacitance to the total capacitance, their sum must be 1: now their sum is 0.88+0.035+0.035=0.95
The interactive.m file must be modified.
Regards, -
Posted on 27 September, 2006 by Anonymous
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Posted on 03 May, 2006 by manas desai
Good way to look at different devices.
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Posted on 21 February, 2006 by steve mcqueen
As an undergraduate student new to the field of nanotechnology I have found the entire Web site full of valuable information and the simulation tools easy to use. Thanks for providing this resource.
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Posted on 07 January, 2006 by Zhao Xu
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FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs, FETToy assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a …
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