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Quantum Mechanics: Time-Dependent Perturbation Theory

Bulk Monte Carlo Lab

This resource has a 5.6 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Overall Period: Updated 21 Nov, 2008
Users: 31
Jobs: 89
Avg. exec. time: 4 mins
Reviews & Citations
Google/IEEE
Avg. Review: 0.0 out of 5 stars
Citations: 0

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This tool is closed source.

Available Versions

  • 1.0 (published)
Version 1.0 - published on 21 Aug, 2008
Contributor(s) Dragica Vasileska
Arizona State University

Mark Lundstrom, Gerhard Klimeck
Purdue University, West Lafayette

Stephen M. Goodnick
Arizona State University
At a glance This tool calculates the bulk values of the carrier drift velocity, average electron energy and electron mobility given the electric field value in arbitrary crystalographic direction
Description

The Bulk Monte Carlo Tool calculates the bulk values of the electron drift velocity, electron average energy and electron mobility for electric fields applied in arbitrary crystallographic direction in both column 4 (Si and Ge) and III-V (GaAs, SiC and GaN) materials. All relevant scattering mechanisms for the materials being considered have been included in the model. Detailed derivation of the scattering rates for most of the scattering mechanisms included in the model can be found on Prof. Vasileska personal web-site http://www.eas.asu.edu/~vasilesk (look under class EEE534 Semiconductor Transport).

Description of the Monte Carlo method used to solve the Boltzmann Transport Equation and implementation details of the tool are given in the

Available also is a voiced presentation

that gives more insight on the implementation details of the Ensemble Monte Carlo technique for the solution of the Boltzmann Transport Equation.

Examples of simulations that can be performed with this tool are given below:
Credits

NSF

References

D. Vasileska and S.M. Goodnick, “Computational Electronics”, published by Morgan & Claypool.

S. M. Goodnick and D. Vasileska, "Computational Electronics", Encyclopedia of Materials: Science and Technology, Vol. 2, Ed. By K. H. J. Buschow, R. W. Cahn, M. C. Flemings, E. J. Kramer and S. Mahajan, Elsevier, New York, 2001, pp. 1456-1471.

D. Vasileska and S. M. Goodnick, "Computational Electronics", Materials Science and Engineering, Reports: A Review Journal, Vol. R38, No. 5, pp. 181-236 (2002).

Cite this work

If you reference this work in a publication, please cite as follows:

    D. Vasileska and S.M. Goodnick, “Computational Electronics”, published by Morgan & Claypool.

    S. M. Goodnick and D. Vasileska, "Computational Electronics", Encyclopedia of Materials: Science and Technology, Vol. 2, Ed. By K. H. J. Buschow, R. W. Cahn, M. C. Flemings, E. J. Kramer and S. Mahajan, Elsevier, New York, 2001, pp. 1456-1471.

    D. Vasileska and S. M. Goodnick, "Computational Electronics", Materials Science and Engineering, Reports: A Review Journal, Vol. R38, No. 5, pp. 181-236 (2002).

  • Vasileska, Dragica; Lundstrom, Mark; Klimeck, Gerhard; Goodnick, Stephen M. (2008), "Bulk Monte Carlo Lab," doi: 10254/nanohub-r4438.1.

    BibTex | EndNote

In addition, we would appreciate it if you would add the following acknowledgment to your publication:

  • Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org
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