NCN Nanoelectronics: Simulation Tools for Education
BJT Lab
- This resource has a 9.3 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Overall Period: Updated 19 Jul, 2008 Users: 94 Jobs: 522 Avg. exec. time: 5 mins Reviews & Citations Google/IEEE Avg. Review: Citations: 0
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This tool is closed source.
Available Versions
- 1.01 (published)
- 1.0 (unpublished)
Supporting Documents
- bjt_lab_hw.doc (DOC, 22 Kb)
- bjt_lab_hw.pdf (PDF, 20.48 Kb)
| Version | 1.01 - published on 26 Mar, 2008 |
|---|---|
| Contributor(s) | Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck Purdue University, West Lafayette |
| At a glance | Simulate bipolar junction transistors |
| Screenshots | |
| Description | This tool allows Bipolar Junction Transistor (BJT) simulation using a 2D mesh. It allows user to simulate npn or pnp type of device. Users can specify the Emitter, Base and Collector region depths and doping densities. Also the material and minority carrier lifetimes can be specified by the user. |
| Powered by | PADRE (Pisces And Device REplacement) developed by Mark Pinto & Kent Smith at AT&T Bell Labs. |
| Sponsored by | NCN@Purdue |
| Cite this work | If you reference this work in a publication, please cite as follows:
In addition, we would appreciate it if you would add the following acknowledgment to your publication:
|
| Type | Tools |
| Tags |
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Posted on 28 March, 2008 by Anonymous
See also
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- 9.1 Ranking Topic Semiconductor Device Education Material
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0.0 Ranking Series
Part of: NCN Nanoelectronics: Simulation Tools for Education
NCN Nanoelectronics: Simulation Tools for Education
Many simulation tools are available on the nanoHUB. The tools have been well-tested and here include supporting materials so that they can be effectively used for education or intelligently used for research. The educational tools include example a first time users guide and example homework …
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