NCN Nanoelectronics: Simulation Tools for Education
Bandstructure Lab
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 877 Jobs: 6491 Avg. exec. time: 8 mins Reviews & Citations Google/IEEE: updated 05 Feb, 2008 Avg. Review: Citations: 3
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| Contributor(s) | Mathieu Luisier, Raseong Kim, Neophytos Neophytou, Michael McLennan, Jing Wang, Anisur Rahman, Gerhard Klimeck, Mark Lundstrom Purdue University, West Lafayette |
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| At a glance | Simulate electronic band structure for a variety of bulk materials and device geometries such as quantum wells and nanowires. | ||||||||||
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| Description | Bandstructure Lab uses the sp3s*d5 tight binding method to compute E(k) for bulk, planar, and nanowire semiconductors. Using this tool, you can quickly compute and visualize the bandstructures of bulk semiconductors, thin films, and nanowires for various materials, growth orientations, and strain conditions. Physical parameters such as the bandgap and effective mass can also be obtained from the computed E(k). The bandedges and effective masses of the bulk materials and the nanostructures structures can be analyzed as a function of various strain conditions.
As explained in a related seminar, correct band structure is essential for modeling devices at the nano scale.
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| Credits | Bandstructure Lab is based on the tight binding model of Boykin and Klimeck, and builds on the work of several Ph.D. students and other researchers:
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| Cite this work | If you reference this work in a publication, please cite as follows:
In addition, we would appreciate it if you would add the following acknowledgment to your publication:
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| Version released | 14 Jan, 2008 | ||||||||||
| Type | Tools | ||||||||||
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Citations
The following are publications that have cited this resource, separated by their affiliation to the NCN.
Affiliated authors
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Neophytou, N.; Paul, A.; Lundstrom, M.; Klimeck, G. (2007), "Bandstructure Effects in Silicon Nanowire Electron Transport", December.
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Neophytou, N.; Paul, A.; Lundstrom, M.; Klimeck, G. (2007), "Simulations of Nanowire Transistors: Atomic vs. Effective Mass Models", Journal of Computational Electronics.
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Neophytou, N.; Paul, A.; Lundstrom, M.; Klimeck, G. (2007), "Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets", Simulation of Semiconductor Processes and Devices, 12: pg. 217-220, September.
Neophytou, N.; Paul, A.; Lundstrom, M.; Klimeck, G. (2007), "Bandstructure Effects in Silicon Nanowire Electron Transport", December.
Neophytou, N.; Paul, A.; Lundstrom, M.; Klimeck, G. (2007), "Simulations of Nanowire Transistors: Atomic vs. Effective Mass Models", Journal of Computational Electronics.
Neophytou, N.; Paul, A.; Lundstrom, M.; Klimeck, G. (2007), "Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets", Simulation of Semiconductor Processes and Devices, 12: pg. 217-220, September.
Reviews
The following are reviews of this resource from other site members.
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Posted on 26 November, 2006 by Anonymous
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Posted on 14 August, 2006 by Ali Khakifirooz
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Posted on 26 May, 2006 by Jing Wang
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