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Engineering Disorder in Opto-Electronics
Online Presentations | 05 Dec 2012 | Contributor(s):: Jacob B. Khurgin
GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency operation. This tremendous potential has not been fully realized yet and in this talk it will be shown...
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ECE 606 Lecture 25: Modern MOSFETs
Online Presentations | 03 Dec 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 21: MOS Electrostatics
Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics
Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities
Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 24: MOSFET Non-Idealities
Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 20: Heterojunction Bipolar Transistor
Online Presentations | 17 Nov 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 19: Bipolar Transistors Design
Online Presentations | 17 Nov 2012 | Contributor(s):: Gerhard Klimeck
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Prasad Sarangapani
Prasad Sarangapani is a PhD candidate in the Department of Electrical and Computer Engineering at Purdue University. He is a member of the NEMO (Nanoelectronics Modeling) group headed by...
https://nanohub.org/members/72949
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ECE 606 Lecture 18: Bipolar Transistors a) Introduction b) Design
Online Presentations | 05 Nov 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 17: Shottky Diode
Online Presentations | 29 Oct 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 16: p-n Diode AC Response
Online Presentations | 24 Oct 2012 | Contributor(s):: Gerhard Klimeck
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Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
Teaching Materials | 24 Oct 2012 | Contributor(s):: Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...
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ECE 606 Lecture 15: p-n Diode Characteristics
Online Presentations | 17 Oct 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 13: Solutions of the Continuity Equations - Analytical & Numerical
Online Presentations | 12 Oct 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Solid State Devices - new version here https://nanohub.org/courses/ECE606/2020x/outline
Courses | 10 Oct 2012 | Contributor(s):: Gerhard Klimeck
I newer version of this course is released herehttps://nanohub.org/courses/ECE606/2020x/outline ------- Note: to access these lectures please login or create an account.This course provides the graduate-level introduction to understand, analyze, characterize and...
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ECE 606 Lecture 11: Interface States Recombination/Carrier Transport
Online Presentations | 10 Oct 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 12: High Field, Mobility, Hall Effect, Diffusion
Online Presentations | 10 Oct 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 14: p-n Junctions
Online Presentations | 04 Oct 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 10: Shockley, Reed, Hall and other Recombinations
Online Presentations | 30 Sep 2012 | Contributor(s):: Gerhard Klimeck