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A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.

Teaching Materials (1-20 of 43)

  1. Transistor Mania: Modeling Electron Flow

    Teaching Materials | 17 Jun 2021 | Contributor(s):: Meghan Saxer, NNCI Nano

    This activity is designed to help the students understand the significance of transistors in their lives. Students will learn how current research on nanoscale transistors is making their favorite electronic devices (i.e., cell phones, gaming devices, computers, etc.) faster and more powerful....

  2. Nanotechnology in Electronics: An Introduction to the units on LEDs, Thermistors, and Transistors

    Teaching Materials | 12 Jan 2020 | Contributor(s):: Jacyln Murray, NNCI Nano

    The purpose of the following group of lab units is to illustrate properties associated with nanotechnology and the electronics industry through utilization of semiconductors.  By using macro-examples of actual nano-circuitry, students will understand what is happening on the...

  3. Semiconductor Device Fundamentals Testbook Module C: Transistor Basics

    Teaching Materials | 01 Jul 2013 | Contributor(s):: Robert F. Pierret

    This is module C (part 3) of the Testbook for Semiconductor Device Fundamentals.

  4. Exams for Semiconductor Device Fundamentals

    Teaching Materials | 01 Jul 2013 | Contributor(s):: Robert F. Pierret

    Collected herein are 54 mostly hour tests that were utilized over the years in a junior/senior-level course entitled “Semiconductor Devices” offered by the School of Electrical and Computer Engineering at the West Lafayette campus of Purdue University. Although the material probed on...

  5. Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition

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    Teaching Materials | 24 Oct 2012 | Contributor(s):: Mark Lundstrom, Xingshu Sun

    These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...

  6. MOSFET Lab Exercise: Series Resistance and Transistor Breakdown

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    Teaching Materials | 13 Jul 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise is supposed to teach the students the role of the source and drain resistance on device output characteristics. The second portion of the assignment is supposed to train students how to simulate MOSFET operation near transistor breakdown.

  7. Verification of the Validity of the BJT Tool

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    Teaching Materials | 24 Aug 2010 | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    A pnp BJT in Common-Base configuration is analyzed both analytically and numerically using BJT Lab. DC current gain and Output characteristics are computed.MATLAB script used is also available for download.

  8. Analytical and Numerical Solution of the Double Barrier Problem

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    Teaching Materials | 28 Jun 2010 | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska

    Tunneling is fully quantum-mechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant tunneling diodes,...

  9. ECE 495N: Fundamentals of Nanoelectronics Lecture Notes (Fall 2009)

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    Teaching Materials | 04 Feb 2010 | Contributor(s):: Mehdi Salmani Jelodar, Supriyo Datta (editor)

    Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.

  10. Illinois ECE 440: MOS Field-Effect Transistor Homework

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    Teaching Materials | 28 Jan 2010 | Contributor(s):: Mohamed Mohamed

    This homework covers Output Characteristics and Mobility Model of MOSFETs.

  11. Illinois ECE 440: znipolar Junction Transistor (BJT) Homework

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    Teaching Materials | 28 Jan 2010 | Contributor(s):: Mohamed Mohamed

    This homework covers BJT Fundamentals, Minority Carrier Distribution, and Terminal Currents.

  12. ECE 495N F08 Exam 2 (Practice)

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    Teaching Materials | 08 Jul 2009 | Contributor(s):: Supriyo Datta

  13. ECE 495N F08 Exam 2

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    Teaching Materials | 08 Jul 2009 | Contributor(s):: Supriyo Datta

  14. ECE 495N F08 Final Exam (Practice)

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    Teaching Materials | 08 Jul 2009 | Contributor(s):: Supriyo Datta

  15. ECE 495N F08 Final Exam

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    Teaching Materials | 08 Jul 2009 | Contributor(s):: Supriyo Datta

  16. ECE 495N F08 Exam 1 (Practice)

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    Teaching Materials | 08 Jul 2009 | Contributor(s):: Supriyo Datta

  17. ECE 495N F08 Exam 1

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    Teaching Materials | 08 Jul 2009 | Contributor(s):: Supriyo Datta

  18. ECE 495N F08 Homework 6 (Lectures 22-25)

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    Teaching Materials | 08 Jul 2009 | Contributor(s):: Supriyo Datta

  19. ECE 495N F08 Homework 7 (Lectures 26-31)

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    Teaching Materials | 08 Jul 2009 | Contributor(s):: Supriyo Datta

  20. ECE 495N F08 Homework 8 (Lectures 32-35)

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    Teaching Materials | 08 Jul 2009 | Contributor(s):: Supriyo Datta