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Description

A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.

Resources (61-80 of 295)

  1. Semiconductor Device Fundamentals Testbook Module C: Transistor Basics

    Teaching Materials | 01 Jul 2013 | Contributor(s):: Robert F. Pierret

    This is module C (part 3) of the Testbook for Semiconductor Device Fundamentals.

  2. Exams for Semiconductor Device Fundamentals

    Teaching Materials | 01 Jul 2013 | Contributor(s):: Robert F. Pierret

    Collected herein are 54 mostly hour tests that were utilized over the years in a junior/senior-level course entitled “Semiconductor Devices” offered by the School of Electrical and Computer Engineering at the West Lafayette campus of Purdue University. Although the material probed on...

  3. Modeling Quantum Transport in Nanoscale Transistors

    Papers | 28 Jun 2013 | Contributor(s):: Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...

  4. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    Papers | 28 Jun 2013 | Contributor(s):: Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...

  5. Computational and Experimental Study of Transport in Advanced Silicon Devices

    Papers | 28 Jun 2013 | Contributor(s):: Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

  6. [Illinois] CNST 2012: III-V Semiconductor Nanowire Arraybased Transistors

    Online Presentations | 02 Jun 2013 | Contributor(s):: Xiuling Li

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  7. ECE 606 Lecture 27: Looking Back and Looking Forward

    Online Presentations | 20 Dec 2012 | Contributor(s):: Gerhard Klimeck

  8. ECE 606 Lecture 26: The Future of Computational Electronics

    Online Presentations | 20 Dec 2012 | Contributor(s):: Gerhard Klimeck

    Future Transistors and Single Atom Transistors; New Modeling Tools (NEMO); nanoHUB: Cloud Computing - Software as a Service

  9. Engineering Disorder in Opto-Electronics

    Online Presentations | 05 Dec 2012 | Contributor(s):: Jacob B. Khurgin

    GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency operation. This tremendous potential has not been fully realized yet and in this talk it will be shown...

  10. ECE 606 Lecture 25: Modern MOSFETs

    Online Presentations | 03 Dec 2012 | Contributor(s):: Gerhard Klimeck

  11. ECE 606 Lecture 21: MOS Electrostatics

    Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck

  12. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck

  13. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

    Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck

  14. ECE 606 Lecture 24: MOSFET Non-Idealities

    Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck

  15. ECE 606 Lecture 20: Heterojunction Bipolar Transistor

    Online Presentations | 17 Nov 2012 | Contributor(s):: Gerhard Klimeck

  16. ECE 606 Lecture 19: Bipolar Transistors Design

    Online Presentations | 17 Nov 2012 | Contributor(s):: Gerhard Klimeck

  17. ECE 606 Lecture 18: Bipolar Transistors a) Introduction b) Design

    Online Presentations | 05 Nov 2012 | Contributor(s):: Gerhard Klimeck

  18. ECE 606 Lecture 17: Shottky Diode

    Online Presentations | 29 Oct 2012 | Contributor(s):: Gerhard Klimeck

  19. ECE 606 Lecture 16: p-n Diode AC Response

    Online Presentations | 24 Oct 2012 | Contributor(s):: Gerhard Klimeck

  20. Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition

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    Teaching Materials | 24 Oct 2012 | Contributor(s):: Mark Lundstrom, Xingshu Sun

    These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...