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Introductory Comments
Online Presentations | 29 Sep 2008 | Contributor(s):: Muhammad A. Alam
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Lecture 7: Connection to the Bottom Up Approach
Online Presentations | 23 Sep 2008 | Contributor(s):: Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.
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Lecture 6: Quantum Transport in Nanoscale FETs
Online Presentations | 12 Sep 2008 | Contributor(s):: Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use...
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ECE 612 Lecture 4: Polysilicon Gates/QM Effects
Online Presentations | 12 Sep 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) Review, 2) Workfunctionof poly gates,3) CV with poly depletion,4) Quantum mechanics and VT,5) Quantum mechanics and C,6) Summary.
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ECE 612 Introductory Lecture
Online Presentations | 10 Sep 2008 | Contributor(s):: Mark Lundstrom
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Lecture 3A: The Ballistic MOSFET
Online Presentations | 10 Sep 2008 | Contributor(s):: Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed...
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Lecture 3B: The Ballistic MOSFET
Online Presentations | 10 Sep 2008 | Contributor(s):: Mark Lundstrom
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
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Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
Online Presentations | 10 Sep 2008 | Contributor(s):: Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins...
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ECE 612 Lecture 3: MOS Capacitors
Online Presentations | 09 Sep 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.
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ECE 612 Lecture 2: 1D MOS Electrostatics II
Online Presentations | 09 Sep 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) Review,2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.
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ECE 612 Lecture 1: 1D MOS Electrostatics I
Online Presentations | 09 Sep 2008 | Contributor(s):: Mark Lundstrom
Outline: 1) Review of some fundamentals,2) Identify next steps.
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Lecture 2: Elementary Theory of the Nanoscale MOSFET
Online Presentations | 08 Sep 2008 | Contributor(s):: Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.
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Lecture 4: Scattering in Nanoscale MOSFETs
Online Presentations | 08 Sep 2008 | Contributor(s):: Mark Lundstrom
No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and...
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Lecture 5: Application to State-of-the-Art FETs
Online Presentations | 08 Sep 2008 | Contributor(s):: Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.
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ECE 495N Lecture 2: Quantum of Conductance
Online Presentations | 02 Sep 2008 | Contributor(s):: Supriyo Datta
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ECE 495N Lecture 1: What Makes Current Flow?
Online Presentations | 28 Aug 2008 | Contributor(s):: Supriyo Datta
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Introduction: Physics of Nanoscale MOSFETs
Online Presentations | 26 Aug 2008 | Contributor(s):: Mark Lundstrom
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Lecture 1: Review of MOSFET Fundamentals
Online Presentations | 26 Aug 2008 | Contributor(s):: Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.
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The Effect of Physical Geometry on the Frequency Response of Carbon Nanotube Field-Effect Transistors
Online Presentations | 03 Aug 2007 | Contributor(s):: Dave Lyzenga
In order for carbon nanotube (CNT) electrical devices to be fabricated, it is necessary to obtain modifiable operation characteristics. Developing parametric equations to achieve this controllability in the vertical field-effect transistor (FET) design is an important first step toward...