Tags: tight-binding
Resources
Tools
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10.0 Ranking Luisier: Bandstructure Lab
Bandstructure Lab
Type Tools Contributor(s) Mathieu Luisier, Raseong Kim, Neophytos Neophytou, Michael McLennan, Jing Wang, Anisur Rahman, Gerhard Klimeck, Mark Lundstrom Date 19 May. 2006 Avg. Rating (3) Rate this Simulate electronic band structure for a variety of bulk materials and device geometries such as quantum wells and nanowires.
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9.5 Ranking Klimeck: Quantum Dot Lab
Quantum Dot Lab
Type Tools Contributor(s) Gerhard Klimeck, Matteo Mannino, Michael McLennan, Wei Qiao, David Ebert Date 12 Nov. 2005 Avg. Rating (11) Rate this Simulate 3-D confined states in simple quantum dot geometries
- 5.1 Ranking Li: CGTB
Learning Modules
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10.0 Ranking Fodor: Introduction to Quantum Dot Lab
Introduction to Quantum Dot Lab
Type Learning Modules Contributor(s) James K Fodor, Jing Guo Date 02 Jul. 2007 Avg. Rating (0) Rate this This learning module introduces nanoHUB users to the Quantum Dot Lab simulator. A brief introduction to Quantum Dot Lab is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable ...
Teaching Materials
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9.1 Ranking Klimeck: Semiconductor Device Education ...
Semiconductor Device Education Material
Type Teaching Materials Contributor(s) Gerhard Klimeck Date 28 Jan. 2008 Avg. Rating (2) Rate this When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are built from components such as transistors, capacitors, ...
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0.0 Ranking Grossman: Computational Nanoscience, Lecture ...
Computational Nanoscience, Lecture 18.5: A Little More, and Lots of Repetition, on Solids
Type Teaching Materials Contributor(s) Jeffrey Grossman, Elif Ertekin Date 05 May. 2008 Avg. Rating (0) Rate this Here we go over again some of the basics that one needs to know and understand in order to carry out electronic structure, atomic-scale calculations of solids.
Publications
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5.3 Ranking Rahman: High Precision Quantum Control of ...
High Precision Quantum Control of Single Donor Spins in Silicon
Type Publications Contributor(s) Rajib Rahman, marta prada, Gerhard Klimeck, Lloyd Hollenberg Date 14 Jan. 2008 Avg. Rating (0) Rate this The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using tight-binding and band minima basis approaches and compared to the recent precision measurements. In contrast with previous effective mass-based ...
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5.3 Ranking Klimeck: Development of a Nanoelectronic ...
Development of a Nanoelectronic 3-D (NEMO 3-D ) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots
Type Publications Contributor(s) Gerhard Klimeck, Timothy Boykin Date 14 Jan. 2008 Avg. Rating (0) Rate this Material layers with a thickness of a few nanometers are common-place in today’s semiconductor devices. Before long, device fabrication methods will reach a point at which the other two device dimensions are scaled down to few tens of nanometers. The total atom count in such deca-nano devices is ...
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5.1 Ranking Kharche: Valley splitting in strained ...
Valley splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder, and alloy disorder
Type Publications Contributor(s) Neerav Kharche, marta prada, Timothy Boykin, Gerhard Klimeck Date 14 Jan. 2008 Avg. Rating (0) Rate this Valley splitting (VS) in strained SiGe/Si/SiGe quantum wells grown on (001) and 2° miscut substrates is computed in a magnetic field. Calculations of flat structures significantly overestimate, while calculations of perfectly ordered structures underestimate experimentally observed VS. Step ...
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4.3 Ranking Klimeck: Atomistic Electronic Structure ...
Atomistic Electronic Structure Calculations of Unstrained Alloyed Systems Consisting of a Million Atoms
Type Publications Contributor(s) Gerhard Klimeck, Timothy Boykin Date 14 Jan. 2008 Avg. Rating (0) Rate this The broadening of the conduction and valence band edges due to compositional disorder in alloyed materials of finite extent is studied using an s p3 s ∗ tight binding model. Two sources of broadening due to configuration and concentration disorder are identified. The concentrational disorder ...
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