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Tags: tight-binding

Resources

Tools

Learning Modules

  • 10.0 Ranking Fodor: Introduction to Quantum Dot Lab

    Introduction to Quantum Dot Lab

    Type Learning Modules
    Contributor(s) James K Fodor, Jing Guo
    Date 02 Jul. 2007
    Avg. Rating 0.0 out of 5 stars  (0)
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    This learning module introduces nanoHUB users to the Quantum Dot Lab simulator. A brief introduction to Quantum Dot Lab is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable ...

Teaching Materials

  • 9.1 Ranking Klimeck: Semiconductor Device Education ...

    Semiconductor Device Education Material

    Type Teaching Materials
    Contributor(s) Gerhard Klimeck
    Date 28 Jan. 2008
    Avg. Rating 5.0 out of 5 stars  (2)
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    When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are built from components such as transistors, capacitors, ...

  • 0.0 Ranking Grossman: Computational Nanoscience, Lecture ...

    Computational Nanoscience, Lecture 18.5: A Little More, and Lots of Repetition, on Solids

    Type Teaching Materials
    Contributor(s) Jeffrey Grossman, Elif Ertekin
    Date 05 May. 2008
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    Here we go over again some of the basics that one needs to know and understand in order to carry out electronic structure, atomic-scale calculations of solids.

Publications

  • 5.3 Ranking Rahman: High Precision Quantum Control of ...

    High Precision Quantum Control of Single Donor Spins in Silicon

    Type Publications
    Contributor(s) Rajib Rahman, marta prada, Gerhard Klimeck, Lloyd Hollenberg
    Date 14 Jan. 2008
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    The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using tight-binding and band minima basis approaches and compared to the recent precision measurements. In contrast with previous effective mass-based ...

  • 5.3 Ranking Klimeck: Development of a Nanoelectronic ...

    Development of a Nanoelectronic 3-D (NEMO 3-D ) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots

    Type Publications
    Contributor(s) Gerhard Klimeck, Timothy Boykin
    Date 14 Jan. 2008
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    Material layers with a thickness of a few nanometers are common-place in today’s semiconductor devices. Before long, device fabrication methods will reach a point at which the other two device dimensions are scaled down to few tens of nanometers. The total atom count in such deca-nano devices is ...

  • 5.1 Ranking Kharche: Valley splitting in strained ...

    Valley splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder, and alloy disorder

    Type Publications
    Contributor(s) Neerav Kharche, marta prada, Timothy Boykin, Gerhard Klimeck
    Date 14 Jan. 2008
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    Valley splitting (VS) in strained SiGe/Si/SiGe quantum wells grown on (001) and 2° miscut substrates is computed in a magnetic field. Calculations of flat structures significantly overestimate, while calculations of perfectly ordered structures underestimate experimentally observed VS. Step ...

  • 4.3 Ranking Klimeck: Atomistic Electronic Structure ...

    Atomistic Electronic Structure Calculations of Unstrained Alloyed Systems Consisting of a Million Atoms

    Type Publications
    Contributor(s) Gerhard Klimeck, Timothy Boykin
    Date 14 Jan. 2008
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    The broadening of the conduction and valence band edges due to compositional disorder in alloyed materials of finite extent is studied using an s p3 s ∗ tight binding model. Two sources of broadening due to configuration and concentration disorder are identified. The concentrational disorder ...

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