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1. Nanoelectronic Modeling Lecture 19: Introduction to RTDs - Asymmetric Structures

   Online Presentations | 27 Jan 2010 | Contributor(s):: Gerhard Klimeck

   This lecture explores this effect in more detail by targeting an RTD that has a deliberate asymmetric structure. The collector barrier is chosen thicker than the emitter barrier. With this set-up we expect that the tunneling rate into the RTD from the emitter is faster than the tunneling rate...

2. Nanoelectronic Modeling Lecture 18: Introduction to RTDs - Quantum Charge Self-Consistency (Hartree)

   Online Presentations | 27 Jan 2010 | Contributor(s):: Gerhard Klimeck

   In this semi-classical charge and potential model the quantum mechanical simulation is performed once and the quantum mechanical charge is in general not identical to the semi-classical charge.

3. Nanoelectronic Modeling Lecture 17: Introduction to RTDs - Relaxation Scattering in the Emitter

   Online Presentations | 27 Jan 2010 | Contributor(s):: Gerhard Klimeck

   Realistic RTDs will have nonlinear electrostatic potential in their emitter. Typically a triangular well is formed in the emitter due to the applied bias and the emitter thus contains discrete quasi bound states.

4. Nanoelectronic Modeling Lecture 16: Introduction to RTDs - Realistic Doping Profiles

   Online Presentations | 27 Jan 2010 | Contributor(s):: Gerhard Klimeck

   Realistic RTDs need extremely high doping to provide enough carriers for high current densities. However, Impurity scattering can destroy the RTD performance. The dopants are therefore typically spaced 20-100nm away from the central double barrier structure.

5. Nanoelectronic Modeling Lecture 12: Open 1D Systems - Transmission through Double Barrier Structures - Resonant Tunneling

   Online Presentations | 27 Jan 2010 | Contributor(s):: Gerhard Klimeck, Dragica Vasileska

   This presentation shows that double barrier structures can show unity transmission for energies BELOW the barrier height, resulting in resonant tunneling. The resonance can be associated with a quasi bound state, and the bound state can be related to a simple particle in a box calculation.

6. Nanoelectronic Modeling: From Quantum Mechanics and Atoms to Realistic Devices

   Courses | 25 Jan 2010 | Contributor(s):: Gerhard Klimeck

   The goal of this series of lectures is to explain the critical concepts in the understanding of the state-of-the-art modeling of nanoelectronic devices such as resonant tunneling diodes, quantum wells, quantum dots, nanowires, and ultra-scaled transistors. Three fundamental concepts critical to...

7. 

   Saima Sharmin

   I am a Ph.D. student at ECE department, Purdue University. I joined Professor Gerhard Klimeck's NEMO (Nanoelectronic Modeling) group as a Graduate Research Assistant in August 2012. Earlier I...

   https://nanohub.org/members/39495

8. Comparison of PCPBT Lab and Periodic Potential Lab

   Presentation Materials | 10 Aug 2009 | Contributor(s):: Abhijeet Paul, Samarth Agarwal, Gerhard Klimeck, Junzhe Geng

   This small presentation provides information about the comparison performed for quantum wells made of GaAs and InAs in two different tools. This has been done to benchmark the results from completely two different sets of tools and validate the obtained results. In this presentation we provide...

9. PCPBT: Problem Assignment for Asymmetric Barriers

   Teaching Materials | 24 Jun 2009 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

   This example demonstrates to the students that for non-symmetric barriers which arise due to the imperfection of the molecular beam epitaxy process there is a reduction in the transmission coefficient and therefore current.

10. RTD with NEGF Demonstration: Basic RTD Asymmetric

    Animations | 12 Jun 2009 | Contributor(s):: Gerhard Klimeck

    This video shows the analysis of a 2 barrier Resonant Tunneling Diode (RTD) over 21 bias points using RTDLab. Several powerful features of this tool are demonstrated.

11. Resonant Tunneling Diode Simulation with NEGF: First-Time User Guide

    Teaching Materials | 01 Jun 2009 | Contributor(s):: Samarth Agarwal, Gerhard Klimeck

    This first-time user guide for Resonant Tunneling Diode Simulation with NEGF provides some fundamental concepts regarding RTDs along with details on how device geometry and simulation parameters influence current and charge distribution inside the device.NCN@Purdue

12. Resonant Tunneling Diode Simulation with NEGF

    Tools | 18 Aug 2008 | Contributor(s):: Hong-Hyun Park, Zhengping Jiang, Arun Goud Akkala, Sebastian Steiger, Michael Povolotskyi, Tillmann Christoph Kubis, Jean Michel D Sellier, Yaohua Tan, SungGeun Kim, Mathieu Luisier, Samarth Agarwal, Michael McLennan, Gerhard Klimeck, Junzhe Geng

    Simulate 1D RTDs using NEGF.

13. Quantum Mechanics: Landauer's Formula

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    Series | 08 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    When a metallic nanojunction between two macroscopic electrodes is connected to a battery, electrical current flows across it. The battery provides, and maintains, the charge imbalance between the electrode surfaces needed to sustain steady-state conduction in the junction. This static...

14. Nanoelectronic Modeling: Multimillion Atom Simulations, Transport, and HPC Scaling to 23,000 Processors

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    Online Presentations | 07 Mar 2008 | Contributor(s):: Gerhard Klimeck

    Future field effect transistors will be on the same length scales as “esoteric” devices such as quantum dots, nanowires, ultra-scaled quantum wells, and resonant tunneling diodes. In those structures the behavior of carriers and their interaction with their environment need to be fundamentally...