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Venkata Abhinav Korada
https://nanohub.org/members/134147
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TE/TM polarisation response of InAs/GaAs quantum dot bilayers
Presentation Materials | 22 Oct 2015 | Contributor(s):: Muhammad Usman
Quantum dot bilayers are strong candidates for the design of telecom devices working at 1300 nm wavelength range. Here we analyse - both experimentally and theoretically - their optical and polarisation properties.
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Ashutosh Manohar
https://nanohub.org/members/128102
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DEBI PRASAD PANDA
I completed my Ph.D. from the IIT Bombay in 2019. My Ph.D. research work was focused on the growth and characterizations of In(Ga)As Quantum DOt Infrared Photodetectors. I joined TIFR Mumbai as...
https://nanohub.org/members/126180
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Johnson Andrade
https://nanohub.org/members/125925
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Fahad Al Mamun
https://nanohub.org/members/125385
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Quantum Dots
Online Presentations | 07 May 2015 | Contributor(s):: Sebastien Maeder, NACK Network
OutlineIntroductionQuantum ConfinementQD SynthesisColloidal MethodsEpitaxial GrowthApplicationsBiologicalLight EmittersAdditionalApplications
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Structure and Morphology of Silicon-Germanium Thin Films
Presentation Materials | 07 Feb 2015 | Contributor(s):: Brian Demczyk
This presentation describes the growth of (Si,Ge & SiGe) thin films on Si and Ge (001) and (111) substrates by ultrahigh vacuum chemical vapor deposition (UHVCVD). Thin films were characterized structurally by conventional and high-resolution transmission electron microscopy (TEM) and...
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Jeremy Scher
https://nanohub.org/members/109924
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Thien Minh Nguyen
https://nanohub.org/members/109901
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Peng Zeng
https://nanohub.org/members/104877
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Sarah White
https://nanohub.org/members/99730
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Structure and Morphology of Silicon Germanium Thin Films
Papers | 30 Dec 2013 | Contributor(s):: Brian Demczyk
Single layer silicon and germanium films as well as nominally 50-50 silicon-germanium alloys were deposited on single crystal silicon and germanium (001) and (111) substrates by ultrahigh vacuum chemical vapor deposition. These films spanned the range of + 4 % film-substrate lattice mismatch. A...
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Ali Khaledi Nasab
I am Ali, MSc in Physics. I am working on modelling of QDs. I will start my PhD next fall (2014).
https://nanohub.org/members/93425
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Radha Krishnan
https://nanohub.org/members/92862
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How to start for solving for a single quantum dot in a p-n junction?
Q&A|Closed | Responses: 0
I have been assigned to build a simulator for a single quantum dot inside a p-n junction. I am supposed to find the eigenstates, absorption spectra. I have written the codes for a Single Quantum...
https://nanohub.org/answers/question/1196
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What is the effective mass of electron in InN (Quantum Dot)?
Q&A|Closed | Responses: 0
I am working with InN QD. I need to know the actual electron effective mass in https://nanohub.org/answers/question/1193
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can anyone please help me by providing self consistent schrodinger poisson’s equation for 1.55um Quantum dot Laser?
Q&A|Closed | Responses: 0
I am working on Quantum Dot Laser. I need to know what is the appropriate Schrodinger Poisson’s equation for 1.55um QD Laser. I need to solve Schrodinger Poisson’s equation. I am...
https://nanohub.org/answers/question/1192
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Why quantum dot simulation domain must contain multi-million atoms?
Online Presentations | 11 Jan 2013 | Contributor(s):: Muhammad Usman
The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the quantum dots. This imposes a critical constraint on the minimum size of the simulation domain to study...
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Excited State Spectroscopy of a Quantum Dot Molecule
Online Presentations | 11 Jan 2013 | Contributor(s):: Muhammad Usman
Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum by Krenner et al (Phys. Rev. Lett. 94 057402, 2005) is quantitatively reproduced,...