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Quantum dots have a small, countable number of electrons confined in a small space. Their electrons are confined by having a tiny bit of conducting material surrounded on all sides by an insulating material. If the insulator is strong enough, and the conducting volume is small enough, then the confinement will force the electrons to have discrete (quantized) energy levels. These energy levels can influence the device behavior at a macroscopic scale, showing up, for example, as peaks in the conductance. Because of the quantized energy levels, quantum dots have been called "artificial atoms." Neighboring, weakly-coupled quantum dots have been called "artificial molecules."

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Papers (1-6 of 6)

  1. Applied Thermal Measurement at the Nanoscale

    Papers | 09 Feb 2022 | Contributor(s):: Zhen Chen, Chris Dames

    This book aims to serve as a practical guide for novices to design and conduct measurements of thermal properties at the nanoscale using electrothermal techniques. An outgrowth of the authors’ tutorials for new graduate students in their own labs, it includes practical details on...

  2. Structure and Morphology of Silicon Germanium Thin Films

    Papers | 30 Dec 2013 | Contributor(s):: Brian Demczyk

    Single layer silicon and germanium films as well as nominally 50-50 silicon-germanium alloys were deposited on single crystal silicon and germanium (001) and (111) substrates by ultrahigh vacuum chemical vapor deposition. These films spanned the range of + 4 % film-substrate lattice mismatch. A...

  3. On the Two to Three Dimensional Growth Transition in Strained Silicon Germanium Thin Films

    Papers | 02 Feb 2012 | Contributor(s):: Brian Demczyk

    Utilizing a model adapted from classical nucleation theory [8], we calculate a "critical thickness" for island formation, taking into account the surfaceenergies of the deposit and the substrate and the elastic modulus of the deposit, to which experimental results for CVD grown silicon germanium...

  4. NEMO3D User Guide for Quantum Dot Simulations

    Papers | 29 Nov 2011 | Contributor(s):: M. Usman, Gerhard Klimeck

    NEMO 3D is a large and complex simulator; and understanding of its source code requires considerable knowledge of quantum mechanics, condensed matter theory, and parallel programming.

  5. Modeling the quantum dot growth in the continuum approximation

    Papers | 12 Jan 2011 | Contributor(s):: Peter Cendula

    Quantum dots can grow spontaneously during molecular beam epitaxy oftwo materials with different lattice parameters, Stranski-Krastanow growth mode.We study a mathematical model based on the continuum approximation of thegrowing layer in two dimensions. Nonlinear evolution equation is solved...

  6. Development of a Nanoelectronic 3-D (NEMO 3-D ) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots

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    Papers | 14 Jan 2008 | Contributor(s):: Gerhard Klimeck, Timothy Boykin

    Material layers with a thickness of a few nanometers are common-place in today’s semiconductordevices. Before long, device fabrication methods will reach a point at which the other two devicedimensions are scaled down to few tens of nanometers. The total atom count in such deca-nanodevices is...